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MSM5416263 Dataheets PDF



Part Number MSM5416263
Manufacturers OKI electronic
Logo OKI electronic
Description Multiport DRAM
Datasheet MSM5416263 DatasheetMSM5416263 Datasheet (PDF)

E2L0019-17-Y1 www.DataSheet4U.com ¡ Semiconductor ¡ Semiconductor MSM5416263 262,144-Word ¥ 16-Bit Multiport DRAM This version: Jan. 1998 MSM5416263 Previous version: Dec. 1996 DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, high speed serial access to SAM port, and bidirectional t.

  MSM5416263   MSM5416263


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E2L0019-17-Y1 www.DataSheet4U.com ¡ Semiconductor ¡ Semiconductor MSM5416263 262,144-Word ¥ 16-Bit Multiport DRAM This version: Jan. 1998 MSM5416263 Previous version: Dec. 1996 DESCRIPTION The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, high speed serial access to SAM port, and bidirectional transfer of data between any selected row in the RAM port and the SAM port. In addition to the conventional multiport DRAM operating modes, the MSM5416263 features block write, flash write functions, extended page mode on the RAM port, a split data transfer capability, and programmable stops on the SAM port. The SAM port requires no refresh operation because it uses static CMOS flip-flops. FEATURES • Single power supply: 5 V ± 10% • RAS only refresh • Full TTL compatibility • CAS before RAS refresh • Multiport organization • Hidden refresh RAM : 256K word ¥ 16 bits • Serial read/write SAM : 512 word ¥ 16 bits • 512 tap location • Extended page mode • Programmable stops • Write per bit • Bidirectional data transfer • Persistent write per bit • Split transfer • Byte write • Masked write transfer • Masked flash write • Refresh: 512 cycles/8 ms • Masked block write (4 ¥ 4 ¥ 4) • Package: 64-pin 525 mil plastic SSOP (SSOP64-P-525-0.80-K) (Product : MSM5416263-xxGS-K) xx indicates speed rank. PRODUCT FAMILY Family MSM5416263-50 MSM5416263-60 MSM5416263-70 Access Time RAM 50 ns 60 ns 70 ns SAM 17 ns 18 ns 20 ns Cycle Time RAM 110 ns 120 ns 140 ns SAM 20 ns 22 ns 22 ns Power Dissipation Operating 180 mA 170 mA 160 mA Standby 9 mA 9 mA 9 mA 1/40 www.DataSheet4U.com ¡ Semiconductor PIN CONFIGURATION (TOP VIEW) VCC TRG VSS SDQ0 DQ0 SDQ1 DQ1 VCC SDQ2 DQ2 SDQ3 DQ3 VSS SDQ4 DQ4 SDQ5 DQ5 VCC SDQ6 DQ6 SDQ7 DQ7 VSS WEL WEU RAS A8 A7 A6 A5 A4 VCC 1 2 3 4 5 6 7 8 9   10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 MSM5416263 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 SC SE VSS SDQ15 DQ15 SDQ14 DQ14 VCC SDQ13 DQ13 SDQ12 DQ12 VSS SDQ11 DQ11 SDQ10 DQ10 VCC SDQ9 DQ9 SDQ8 DQ8 VSS DSF NC CAS QSF A0 A1 A2 A3 VSS 64-Pin Plastic SSOP Pin Name A0 - A8 DQ0 - DQ15 SDQ0 - SDQ15 RAS CAS WEL WEU TRG Function Address Input RAM Inputs/Outputs SAM Inputs/Outputs Row Address Strobe Column Address Strobe Write Enable Lower Write Enable Upper Transfer/Output Enable Pin Name SC SE DSF QSF VCC VSS NC Function Serial Clock SAM Port Enable Special Function Input Special Function Output Power Supply (5 V) Ground (0 V) No Connection Note: The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin. 2/40 www.DataSheet4U.com ¡ Semiconductor BLOCK DIAGRAM Column Address Buffer Column Decoder Block Write Control I/O Control Column Mask Register Color Register Mask Register RAM Input Buffer DQ 0 - 15 RAM Output Buffer Sense Amp. Row Decoder Row Address Buffer 512 ¥ 512 ¥ 16 RAM ARRAY Flash Write Control SAM Input Buffer SDQ 0 - 15 SAM Output Buffer Timing Generator A0 - A8 Refresh Counter Gate SAM Gate SAM RAS CAS TRG WEU / WEL DSF SC SE Serial Decoder SAM Address Buffer SAM Address Counter QSF SAM Stop Control VCC VSS MSM5416263 3/40 www.DataSheet4U.com ¡ Semiconductor MSM5416263 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Note: 1) Parameter Input Output Voltage Output Current Power Dissipation Operating Temperature Storage Temperature Symbol VT IOS PD Topr Tstg Condition Ta = 25°C Ta = 25°C Ta = 25°C — — Rating –1.0 to 7.0 50 1 0 to 70 –55 to 150 Unit V mA W °C °C Recommended Operating Conditions (Ta = 0°C to 70°C) (Note: 2) Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VIH VIL Min. 4.5 2.4 –1.0 Typ. 5.0 — — Max. 5.5 6.5 0.8 Unit V V V Capacitance (VCC = 5 V ±10%, f = 1 MHz, Ta = 25°C) Parameter Input Capacitance Input/Output Capacitance Output Capacitance Symbol Ci Cio Co(QSF) Min. — — — Max. 8 9 9 Unit pF pF pF Note: This parameter is periodically sampled and is not 100% tested. DC Characteristics 1 Parameter Output "H" Level Voltage Output "L" Level Voltage Input Leakage Current Symbol VOH VOL ILI Condition IOH = –1 mA IOL = 2.1 mA 0 £ VIN £ VCC All other pins not under test = 0 V 0 £ VOUT £ 5.5 V Output Disable Min. 2.4 — –10 Max. — 0.4 10 mA –10 10 Unit V Output Leakage Current ILO 4/40 www.DataSheet4U.com ¡ Semiconductor DC Characteristics 2 MSM5416263 (VCC = 5 V ±10%, Ta = 0°C to 70°C) Item (RAM) Operating Current (RAS, CAS Cycling, tRC = tRC min.) Standby Current (RAS, CAS = VIH) RAS Only Refresh Current (RAS Cycling, CAS = VIH, tRC = tRC min.) Page Mode Current (RAS = VIL, CAS Cycling, tPC = tPC min.) CAS before RAS Refresh Current (RAS Cycling, CAS before RAS, tRC = tRC min.) Data Transfer Current (RAS, CAS Cycling, tR.


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