Document
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¡ Semiconductor MSM5416263
262,144-Word ¥ 16-Bit Multiport DRAM
This version: Jan. 1998 MSM5416263 Previous version: Dec. 1996
DESCRIPTION
The MSM5416263 is a 4-Mbit CMOS multiport DRAM composed of a 262,144-word by 16-bit dynamic RAM, and a 512-word by 16-bit SAM. Its RAM and SAM operate independently and asynchronously. It supports three types of operations: random access to RAM port, high speed serial access to SAM port, and bidirectional transfer of data between any selected row in the RAM port and the SAM port. In addition to the conventional multiport DRAM operating modes, the MSM5416263 features block write, flash write functions, extended page mode on the RAM port, a split data transfer capability, and programmable stops on the SAM port. The SAM port requires no refresh operation because it uses static CMOS flip-flops.
FEATURES
• Single power supply: 5 V ± 10% • RAS only refresh • Full TTL compatibility • CAS before RAS refresh • Multiport organization • Hidden refresh RAM : 256K word ¥ 16 bits • Serial read/write SAM : 512 word ¥ 16 bits • 512 tap location • Extended page mode • Programmable stops • Write per bit • Bidirectional data transfer • Persistent write per bit • Split transfer • Byte write • Masked write transfer • Masked flash write • Refresh: 512 cycles/8 ms • Masked block write (4 ¥ 4 ¥ 4) • Package: 64-pin 525 mil plastic SSOP (SSOP64-P-525-0.80-K) (Product : MSM5416263-xxGS-K) xx indicates speed rank.
PRODUCT FAMILY
Family MSM5416263-50 MSM5416263-60 MSM5416263-70 Access Time RAM 50 ns 60 ns 70 ns SAM 17 ns 18 ns 20 ns Cycle Time RAM 110 ns 120 ns 140 ns SAM 20 ns 22 ns 22 ns Power Dissipation Operating 180 mA 170 mA 160 mA Standby 9 mA 9 mA 9 mA
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PIN CONFIGURATION (TOP VIEW)
VCC TRG VSS SDQ0 DQ0 SDQ1 DQ1 VCC SDQ2 DQ2 SDQ3 DQ3 VSS SDQ4 DQ4 SDQ5 DQ5 VCC SDQ6 DQ6 SDQ7 DQ7 VSS WEL WEU RAS A8 A7 A6 A5 A4 VCC
1 2 3 4 5 6 7 8 9
10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32
MSM5416263
64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33
SC SE VSS SDQ15 DQ15 SDQ14 DQ14 VCC SDQ13 DQ13 SDQ12 DQ12 VSS SDQ11 DQ11 SDQ10 DQ10 VCC SDQ9 DQ9 SDQ8 DQ8 VSS DSF NC CAS QSF A0 A1 A2 A3 VSS
64-Pin Plastic SSOP
Pin Name A0 - A8 DQ0 - DQ15 SDQ0 - SDQ15 RAS CAS WEL WEU TRG
Function Address Input RAM Inputs/Outputs SAM Inputs/Outputs Row Address Strobe Column Address Strobe Write Enable Lower Write Enable Upper Transfer/Output Enable
Pin Name SC SE DSF QSF VCC VSS NC
Function Serial Clock SAM Port Enable Special Function Input Special Function Output Power Supply (5 V) Ground (0 V) No Connection
Note:
The same power supply voltage must be provided to every VCC pin, and the same GND voltage level must be provided to every VSS pin.
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BLOCK DIAGRAM
Column Address Buffer
Column Decoder
Block Write Control I/O Control
Column Mask Register Color Register Mask Register RAM Input Buffer DQ 0 - 15 RAM Output Buffer
Sense Amp.
Row Decoder
Row Address Buffer
512 ¥ 512 ¥ 16 RAM ARRAY
Flash Write Control SAM Input Buffer SDQ 0 - 15 SAM Output Buffer Timing Generator
A0 - A8
Refresh Counter
Gate SAM
Gate SAM
RAS CAS TRG WEU / WEL DSF SC SE
Serial Decoder SAM Address Buffer
SAM Address Counter
QSF
SAM Stop Control
VCC VSS
MSM5416263
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MSM5416263
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(Note: 1) Parameter Input Output Voltage Output Current Power Dissipation Operating Temperature Storage Temperature Symbol VT IOS PD Topr Tstg Condition Ta = 25°C Ta = 25°C Ta = 25°C — — Rating –1.0 to 7.0 50 1 0 to 70 –55 to 150 Unit V mA W °C °C
Recommended Operating Conditions
(Ta = 0°C to 70°C) (Note: 2) Parameter Power Supply Voltage Input High Voltage Input Low Voltage Symbol VCC VIH VIL Min. 4.5 2.4 –1.0 Typ. 5.0 — — Max. 5.5 6.5 0.8 Unit V V V
Capacitance
(VCC = 5 V ±10%, f = 1 MHz, Ta = 25°C) Parameter Input Capacitance Input/Output Capacitance Output Capacitance Symbol Ci Cio Co(QSF) Min. — — — Max. 8 9 9 Unit pF pF pF
Note:
This parameter is periodically sampled and is not 100% tested.
DC Characteristics 1
Parameter Output "H" Level Voltage Output "L" Level Voltage Input Leakage Current Symbol VOH VOL ILI Condition IOH = –1 mA IOL = 2.1 mA 0 £ VIN £ VCC All other pins not under test = 0 V 0 £ VOUT £ 5.5 V Output Disable Min. 2.4 — –10 Max. — 0.4 10 mA –10 10 Unit V
Output Leakage Current
ILO
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DC Characteristics 2
MSM5416263
(VCC = 5 V ±10%, Ta = 0°C to 70°C) Item (RAM) Operating Current (RAS, CAS Cycling, tRC = tRC min.) Standby Current (RAS, CAS = VIH) RAS Only Refresh Current (RAS Cycling, CAS = VIH, tRC = tRC min.) Page Mode Current (RAS = VIL, CAS Cycling, tPC = tPC min.) CAS before RAS Refresh Current (RAS Cycling, CAS before RAS, tRC = tRC min.) Data Transfer Current (RAS, CAS Cycling, tR.