recovery diode. HFA25PB60PBF Datasheet

HFA25PB60PBF diode. Datasheet pdf. Equivalent

Part HFA25PB60PBF
Description soft recovery diode
Feature www.DataSheet4U.com PD - 95684A HFA25PB60PbF HEXFRED • • • • • • TM Ultrafast, Soft Recovery Diod.
Manufacture International Rectifier
Datasheet
Download HFA25PB60PBF Datasheet



HFA25PB60PBF
www.DataSheet4U.com
PD - 95684A
HFA25PB60PbF
HEXFREDTM
Ultrafast, Soft Recovery Diode
Features
• Ultrafast Recovery
• Ultrasoft Recovery
• Very Low IRRM
• Very Low Qrr
• Specified at Operating Conditions
• Lead-Free
Benefits
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
BASE
CATHODE
4
2
1
CATHODE
3
ANODE
2
Description
International Rectifier's HFA25PB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 25 amps continuous current, the HFA25PB60 is
especially well suited for use as the companion diode for IGBTs and MOSFETs.
In addition to ultra fast recovery time, the HEXFRED product line features
extremely low values of peak recovery current (IRRM) and does not exhibit any
tendency to "snap-off" during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching transistor. These HEXFRED
advantages can help to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA25PB60 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor
drives, and many other similar applications where high speed, high efficiency is
needed.
VR = 600V
VF(typ.)* = 1.3V
IF(AV) = 25A
Qrr (typ.)= 112nC
IRRM = 10A
trr(typ.) = 23ns
di(rec)M/dt (typ.) = 250A/µs
TO-247AC (Modified)
Absolute Maximum Ratings
VR
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
IFRM
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
* 125°C
www.irf.com
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Max
600
25
225
100
151
60
-55 to +150
Units
V
A
W
C
1
11/2/04



HFA25PB60PBF
HFA25PB60PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min Typ Max Units
Test Conditions
VBR
Cathode Anode Breakdown Voltage
600 ––– ––– V IR = 100µA
––– 1.3 1.7
VFM Max Forward Voltage
––– 1.5 2.0 V IF = 50A
IF = 25A
See Fig. 1
IRM Max Reverse Leakage Current
CT Junction Capacitance
LS Series Inductance
––– 1.3 1.7
IF = 25A, TJ = 125°C
––– 1.5 20 µA VR = VR Rated
See Fig. 2
––– 600 2000
TJ = 125°C, VR = 0.8 x VR RatedD Rated
––– 55 100 pF VR = 200V
See Fig. 3
––– 12 ––– nH Measured lead to lead 5mm from
package body
Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)
trr
trr1
trr2
IRRM1
IRRM2
Qrr1
Qrr2
di(rec)M/dt1
di(rec)M/dt2
Parameter
Reverse Recovery Time
See Fig. 5 & 10
Peak Recovery Current
See Fig. 6 & 10
Reverse Recovery Charge
See Fig. 7 & 10
Peak Rate of Fall of Recovery Current
During tb
See Fig. 8 & 10
Min Typ Max Units
Test Conditions
––– 23 –––
––– 50 75
IF = 1.0A, dif/dt = 200A/µs, VR = 30V
ns TJ = 25°C
––– 105 160
TJ = 125°C
IF = 25A
––– 4.5 10
––– 8.0 15
A TJ = 25°C
TJ = 125°C
––– 112 375 nC TJ = 25°C
––– 420 1200
TJ = 125°C
––– 250 ––– A/µs TJ = 25°C
––– 160 –––
TJ = 125°C
VR = 200V
dif/dt = 200A/µs
Thermal - Mechanical Characteristics
Tlead
RthJC
RthJA‚
RthCSƒ
Parameter
Lead Temperature
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Case to Heat Sink
Wt Weight
Mounting Torque
 0.063 in. from Case (1.6mm) for 10 sec
‚ Typical Socket Mount
ƒ Mounting Surface, Flat, Smooth and Greased
Min
––––
––––
––––
––––
––––
––––
6.0
5.0
Typ
––––
––––
––––
0.25
6.0
0.21
––––
––––
Max
300
0.83
40
––––
––––
––––
12
10
Units
°C
K/W
g
(oz)
Kg-cm
lbf•in
2 www.irf.com







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)