Power MOSFET. IRF3205LPBF Datasheet

IRF3205LPBF MOSFET. Datasheet pdf. Equivalent

Part IRF3205LPBF
Description Power MOSFET
Feature www.DataSheet4U.com PD - 95106 IRF3205SPbF IRF3205LPbF l l l l l l l Advanced Process Technology .
Manufacture International Rectifier
Datasheet
Download IRF3205LPBF Datasheet




IRF3205LPBF
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l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
G
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing surface
mount package. The D2Pak is suitable for high current applications
because of its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF3205L) is available for low-profile
applications.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Thermal Resistance
RθJC
RθJA
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Parameter
Junction-to-Case
Junction-to-Ambient (PCB mounted, steady-state)*
PD - 95106
IRF3205SPbF
IRF3205LPbF
HEXFET® Power MOSFET
D VDSS = 55V
RDS(on) = 8.0m
ID = 110A…
S
D2Pak
TO-262
IRF3205SPbF IRF3205LPbF
Max.
110 …
80
390
200
1.3
± 20
62
20
5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
–––
Max.
0.75
40
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Units
°C/W
1
03/11/04



IRF3205LPBF
IRF3205S/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
EAS Single Pulse Avalanche Energy‚
Min. Typ. Max. Units
55 ––– ––– V
––– 0.057 ––– V/°C
––– ––– 8.0 m
2.0 ––– 4.0 V
44 ––– ––– S
––– ––– 25
––– ––– 250
µA
–––
–––
––– 100
––– -100
nA
––– ––– 146
––– ––– 35 nC
––– ––– 54
––– 14 –––
––– 101 –––
––– 50 –––
ns
––– 65 –––
––– 4.5 –––
––– 7.5 –––
nH
––– 3247 –––
––– 781 –––
––– 211 –––
––– 1050† 264‡
pF
mJ
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 62A „
VDS = VGS, ID = 250µA
VDS = 25V, ID = 62A„
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 62A
VDS = 44V
VGS = 10V, See Fig. 6 and 13
VDD = 28V
ID = 62A
RG = 4.5
VGS = 10V, See Fig. 10 „
Between lead,
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
IAS = 62A, L = 138µH
D
S
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 138µH
RG = 25, IAS = 62A. (See Figure 12)
ƒ ISD 62A, di/dt 207A/µs, VDD V(BR)DSS,
TJ 175°C
Min. Typ. Max. Units
Conditions
––– ––– 110
––– ––– 390
MOSFET symbol
A showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.3 V TJ = 25°C, IS = 62A, VGS = 0V „
––– 69 104 ns TJ = 25°C, IF = 62A
––– 143 215 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
„ Pulse width 400µs; duty cycle 2%.
… Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
† This is a typical value at device destruction and represents
operation outside rated limits.
‡This is a calculated value limited to TJ = 175°C.
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2
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