Power MOSFET. IRF3704ZCS Datasheet

IRF3704ZCS MOSFET. Datasheet pdf. Equivalent

Part IRF3704ZCS
Description Power MOSFET
Feature www.DataSheet4U.com PD - 94782 IRF3704ZCS IRF3704ZCL Applications l High Frequency Synchronous Buc.
Manufacture International Rectifier
Datasheet
Download IRF3704ZCS Datasheet




IRF3704ZCS
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Applications
l High Frequency Synchronous Buck
Converters for Computer Processor Power
Benefits
l Low RDS(on) at 4.5V VGS
l Ultra-Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
PD - 94782
IRF3704ZCS
IRF3704ZCL
HEXFET® Power MOSFET
VDSS RDS(on) max Qg
20V 7.9m: 8.7nC
D2Pak
IRF3704ZCS
TO-262
IRF3704ZCL
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
RθJC Junction-to-Case
fRθJA Junction-to-Ambient (PCB Mount)
Max.
20
± 20
67 g
47 g
260
57
28
0.38
-55 to + 175
300 (1.6mm from case)
Typ.
–––
–––
Max.
2.65
40
Units
V
A
W
W/°C
°C
Units
°C/W
Notes  through … are on page 11
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1
9/15/03



IRF3704ZCS
IRF3704ZCS/L
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
VGS(th)
VGS(th)/TJ
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
20
–––
–––
–––
1.65
–––
–––
0.014
6.3
8.9
2.1
-5.6
–––
–––
7.9
11.1
2.55
–––
V VGS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
emVGS = 10V, ID = 21A
eVGS = 4.5V, ID = 17A
V VDS = VGS, ID = 250µA
mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 1.0 µA VDS = 16V, VGS = 0V
––– ––– 150
VDS = 16V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
48 ––– ––– S VDS = 10V, ID = 17A
Qg Total Gate Charge
––– 8.7 13
Qgs1
Qgs2
Qgd
Qgodr
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
––– 2.9 –––
VDS = 10V
––– 1.1 ––– nC VGS = 4.5V
––– 2.3 –––
ID = 17A
––– 2.4 –––
See Fig. 16
Qsw Switch Charge (Qgs2 + Qgd)
––– 3.4 –––
Qoss
td(on)
tr
td(off)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 5.6 ––– nC VDS = 10V, VGS = 0V
––– 8.9 –––
eVDD = 10V, VGS = 4.5V
––– 38 –––
ID = 17A
––– 11 ––– ns Clamped Inductive Load
tf Fall Time
––– 4.2 –––
Ciss Input Capacitance
––– 1220 –––
VGS = 0V
Coss Output Capacitance
––– 390 ––– pF VDS = 10V
Crss
Reverse Transfer Capacitance
––– 190 –––
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÙIAR Avalanche Current
™EAR Repetitive Avalanche Energy
Typ.
–––
–––
–––
Max.
36
17
5.7
Units
mJ
A
mJ
Diode Characteristics
Parameter
IS Continuous Source Current
gMin. Typ. Max. Units
Conditions
––– ––– 67
MOSFET symbol
D
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
––– ––– 260
A showing the
integral reverse
G
––– ––– 1.0
p-n junction diode.
S
eV TJ = 25°C, IS = 17A, VGS = 0V
e––– 11 17 ns TJ = 25°C, IF = 17A, VDD = 10V
––– 2.3 3.5 nC di/dt = 100A/µs
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