Power MOSFET. IRF6215S Datasheet

IRF6215S MOSFET. Datasheet pdf. Equivalent

Part IRF6215S
Description (IRF6215L/S) HEXFET Power MOSFET
Feature www.DataSheet4U.com PD - 91643 IRF6215S/L HEXFET® Power MOSFET Advanced Process Technology Surface.
Manufacture International Rectifier
Datasheet
Download IRF6215S Datasheet




IRF6215S
www.DataSheet4U.com
l Advanced Process Technology
l Surface Mount (IRF6215S)
l Low-profile through-hole (IRF6215L)
l 175°C Operating Temperature
l Fast Switching
l P-Channel
l Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate
up to 2.0W in a typical surface mount application.
The through-hole version (IRF6215L) is available for low-
profile applications.
Absolute Maximum Ratings
G
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V…
Continuous Drain Current, VGS @ -10V…
Pulsed Drain Current …
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Thermal Resistance
RθJC
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient ( PCB Mounted,steady-state)**
PD - 91643
IRF6215S/L
HEXFET® Power MOSFET
D VDSS = -150V
RDS(on) = 0.29
ID = -13A
S
D 2 Pak
T O -26 2
Max.
-13
-9.0
-44
3.8
110
0.71
± 20
310
-6.6
11
-5.0
-55 to + 175
300 (1.6mm from case )
Typ.
–––
–––
Max.
1.4
40
Units
A
W
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
5/13/98



IRF6215S
IRF6215S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-150 ––– ––– V VGS = 0V, ID = -250µA
––– -0.20 ––– V/°C Reference to 25°C, ID = -1mA…
––– ––– 0.29
VGS = -10V, ID = -6.6A „
––– ––– 0.58 VGS = -10V, ID = -6.6A „ TJ = 150°C
-2.0 ––– -4.0 V VDS = VGS, ID = -250µA
3.6 ––– ––– S VDS = -25V, ID = -6.6A…
––– ––– -25 µ A VDS = 150V, VGS = 0V
––– ––– -250
VDS = 120V, VGS = 0V, TJ = 150°C
––– ––– 100 nA VGS = -20V
––– ––– -100
VGS = 20V
––– ––– 66
ID = -6.6A
––– ––– 8.1
––– ––– 35
nC VDS = -120V
VGS = -10V, See Fig. 6 and 13 „…
––– 14 –––
VDD = -75V
––– 36 –––
ID = -6.6A
––– 53 –––
––– 37 –––
RG = 6.8
RD = 12Ω, See Fig. 10 „…
––– 7.5 –––
Between lead,
nH
and center of die contact
––– 860 –––
VGS = 0V
––– 220 ––– pF VDS = -25V
––– 130 –––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -11
––– ––– -44
––– ––– -1.6
MOSFET symbol
D
A showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = -6.6A, VGS = 0V „
––– 160 240 ns TJ = 25°C, IF = -6.6A
––– 1.2 1.7 µC di/dt = -100A/µs „…
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
„ Pulse width 300µs; duty cycle 2%.
‚ Starting TJ = 25°C, L = 14mH
RG = 25, IAS = -6.6A. (See Figure 12)
… Uses IRF6215 data and test conditions
ƒ ISD -6.6A, di/dt -620A/µs, VDD V(BR)DSS,
TJ 175°C
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.







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