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LPC660 Dataheets PDF



Part Number LPC660
Manufacturers National Semiconductor
Logo National Semiconductor
Description Low Power CMOS Quad Operational Amplifier
Datasheet LPC660 DatasheetLPC660 Datasheet (PDF)

LPC660 Low Power CMOS Quad Operational Amplifier March 1998 LPC660 Low Power CMOS Quad Operational Amplifier General Description The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VO.

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LPC660 Low Power CMOS Quad Operational Amplifier March 1998 LPC660 Low Power CMOS Quad Operational Amplifier General Description The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kΩ and 5 kΩ) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 1 mW. This chip is built with National’s advanced Double-Poly Silicon-Gate CMOS process. See the LPC662 datasheet for a Dual CMOS operational amplifier and LPC661 datasheet for a single CMOS operational amplifier with these same features. n n n n n Long-term integrator High-impedance preamplifier Active filter Sample-and-Hold circuit Peak detector Features n n n n n n n n n n n n Rail-to-rail output swing Micropower operation: Specified for 100 kΩ and 5 kΩ loads High voltage gain: Low input offset voltage: Low offset voltage drift: Ultra low input bias current: Input common-mode includes V− Operation range from +5V to +15V Low distortion: Slew rate: Full military temp. range available (1 mW) 120 dB 3 mV 1.3 µV/˚C 2 fA Applications n High-impedance buffer n Precision current-to-voltage converter 0.01% at 1 kHz 0.11 V/µs Connection Diagram 14-Pin DIP/SO DS010547-1 Top View © 1999 National Semiconductor Corporation DS010547 www.national.com Ordering Information Package 14-Pin Side Brazed Ceramic DIP 14-Pin Small Outline 14-Pin Molded DIP 14-Pin Ceramic DIP LPC660AMJ/883 LPC660AIM or LPC660IM LPC660AIN or LPC660IN J14A Rail N14A M14A Rail Tape and Reel Rail Temperature Range Military LPC660AMD Industrial NSC Drawing D14E Transport Media Rail www.national.com 2 Absolute Maximum Ratings (Note 3) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Differential Input Voltage Supply Voltage (V+ − V−) Output Short Circuit to V+ Output Short Circuit to V− Lead Temperature (Soldering, 10 sec.) Storage Temp. Range Junction Temperature (Note 2) ESD Rating (C = 100 pF, R = 1.5 kΩ) Power Dissipation Current at Input Pin Current at Output Pin Voltage at Input/Output Pin Current at Power Supply Pin (V+) + 0.3V, (V−) − 0.3V 35 mA Operating Ratings (Note 3) Temperature Range LPC660AM LPC660AI LPC660I Supply Range Power Dissipation Thermal Resistance (θJA), (Note 10) 14-Pin Ceramic DIP 14-Pin Molded DIP 14-Pin SO 14-Pin Side Brazed Ceramic DIP −55˚C ≤ TJ ≤ +125˚C −40˚C ≤ TJ ≤ +85˚C −40˚C ≤ TJ ≤ +85˚C 4.75V to 15.5V (Note 9) 90˚C/W 85˚C/W 115˚C/W 90˚C/W ± Supply Voltage 16V (Note 11) (Note 1) 260˚C −65˚C to +150˚C 150˚C 1000V (Note 2) ± 5 mA ± 18 mA DC E.


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