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LPC660 Low Power CMOS Quad Operational Amplifier
March 1998
LPC660 Low Power CMOS Quad Operational Amplifier
General Description
The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kΩ and 5 kΩ) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 1 mW. This chip is built with National’s advanced Double-Poly Silicon-Gate CMOS process. See the LPC662 datasheet for a Dual CMOS operational amplifier and LPC661 datasheet for a single CMOS operational amplifier with these same features. n n n n n Long-term integrator High-impedance preamplifier Active filter Sample-and-Hold circuit Peak detector
Features
n n n n n n n n n n n n Rail-to-rail output swing Micropower operation: Specified for 100 kΩ and 5 kΩ loads High voltage gain: Low input offset voltage: Low offset voltage drift: Ultra low input bias current: Input common-mode includes V− Operation range from +5V to +15V Low distortion: Slew rate: Full military temp. range available (1 mW) 120 dB 3 mV 1.3 µV/˚C 2 fA
Applications
n High-impedance buffer n Precision current-to-voltage converter
0.01% at 1 kHz 0.11 V/µs
Connection Diagram
14-Pin DIP/SO
DS010547-1
Top View
© 1999 National Semiconductor Corporation
DS010547
www.national.com
Ordering Information
Package 14-Pin Side Brazed Ceramic DIP 14-Pin Small Outline 14-Pin Molded DIP 14-Pin Ceramic DIP LPC660AMJ/883 LPC660AIM or LPC660IM LPC660AIN or LPC660IN J14A Rail N14A M14A Rail Tape and Reel Rail Temperature Range Military LPC660AMD Industrial NSC Drawing D14E Transport Media Rail
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2
Absolute Maximum Ratings (Note 3)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. Differential Input Voltage Supply Voltage (V+ − V−) Output Short Circuit to V+ Output Short Circuit to V− Lead Temperature (Soldering, 10 sec.) Storage Temp. Range Junction Temperature (Note 2) ESD Rating (C = 100 pF, R = 1.5 kΩ) Power Dissipation Current at Input Pin Current at Output Pin
Voltage at Input/Output Pin Current at Power Supply Pin
(V+) + 0.3V, (V−) − 0.3V 35 mA
Operating Ratings (Note 3)
Temperature Range LPC660AM LPC660AI LPC660I Supply Range Power Dissipation Thermal Resistance (θJA), (Note 10) 14-Pin Ceramic DIP 14-Pin Molded DIP 14-Pin SO 14-Pin Side Brazed Ceramic DIP −55˚C ≤ TJ ≤ +125˚C −40˚C ≤ TJ ≤ +85˚C −40˚C ≤ TJ ≤ +85˚C 4.75V to 15.5V (Note 9) 90˚C/W 85˚C/W 115˚C/W 90˚C/W
± Supply Voltage
16V (Note 11) (Note 1) 260˚C −65˚C to +150˚C 150˚C 1000V (Note 2) ± 5 mA ± 18 mA
DC E.