DatasheetsPDF.com

LPC660

National Semiconductor

Low Power CMOS Quad Operational Amplifier

LPC660 Low Power CMOS Quad Operational Amplifier March 1998 LPC660 Low Power CMOS Quad Operational Amplifier General D...


National Semiconductor

LPC660

File Download Download LPC660 Datasheet


Description
LPC660 Low Power CMOS Quad Operational Amplifier March 1998 LPC660 Low Power CMOS Quad Operational Amplifier General Description The LPC660 CMOS Quad operational amplifier is ideal for operation from a single supply. It features a wide range of operating voltages from +5V to +15V and features rail-to-rail output swing in addition to an input common-mode range that includes ground. Performance limitations that have plagued CMOS amplifiers in the past are not a problem with this design. Input VOS, drift, and broadband noise as well as voltage gain (into 100 kΩ and 5 kΩ) are all equal to or better than widely accepted bipolar equivalents, while the power supply requirement is typically less than 1 mW. This chip is built with National’s advanced Double-Poly Silicon-Gate CMOS process. See the LPC662 datasheet for a Dual CMOS operational amplifier and LPC661 datasheet for a single CMOS operational amplifier with these same features. n n n n n Long-term integrator High-impedance preamplifier Active filter Sample-and-Hold circuit Peak detector Features n n n n n n n n n n n n Rail-to-rail output swing Micropower operation: Specified for 100 kΩ and 5 kΩ loads High voltage gain: Low input offset voltage: Low offset voltage drift: Ultra low input bias current: Input common-mode includes V− Operation range from +5V to +15V Low distortion: Slew rate: Full military temp. range available (1 mW) 120 dB 3 mV 1.3 µV/˚C 2 fA Applications n High-impedance buffer n Precision current-to-voltag...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)