Power MOSFET. IRF6215PBF Datasheet

IRF6215PBF MOSFET. Datasheet pdf. Equivalent

Part IRF6215PBF
Description Power MOSFET
Feature www.DataSheet4U.com PD - 94817 IRF6215PbF Advanced Process Technology Dynamic dv/dt Rating 175°C O.
Manufacture International Rectifier
Datasheet
Download IRF6215PBF Datasheet




IRF6215PBF
www.DataSheet4U.com
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated
Lead-Free
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD - 94817
IRF6215PbF
HEXFET® Power MOSFET
D
VDSS = -150V
RDS(on) = 0.29
S ID = -13A
TO-220AB
Max.
-13
-9.0
-44
110
0.71
± 20
310
-6.6
11
-5.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
1.4
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
11/5/03



IRF6215PBF
IRF6215PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min.
-150
–––
–––
–––
-2.0
3.6
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max.
––– –––
-0.20 –––
––– 0.29
––– 0.58
––– -4.0
––– –––
––– -25
––– -250
––– 100
––– -100
––– 66
––– 8.1
––– 35
14 –––
36 –––
53 –––
37 –––
4.5 –––
7.5 –––
860 –––
220 –––
130 –––
Units
V
V/°C
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = -10V, ID = -6.6A , TJ = 25°C
VGS = -10V, ID = -6.6A , TJ = 150°C
VDS = VGS, ID = -250µA
VDS = -50V, ID = -6.6A
VDS = -150V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = -6.6A
VDS = -120V
VGS = -10V, See Fig. 6 and 13
VDD = -75V
ID = -6.6A
RG = 6.8
RD = 12Ω, See Fig. 10
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = -25V
S
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– -13
––– ––– -44
––– ––– -1.6
––– 160 240
––– 1.2 1.7
MOSFET symbol
D
A showing the
integral reverse
G
p-n junction diode.
S
V TJ = 25°C, IS = -6.6A, VGS = 0V
ns TJ = 25°C, IF = -6.6A
µC di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 14mH
RG = 25, IAS = -6.6A. (See Figure 12)
ISD -6.6A, di/dt -620A/µs, VDD V(BR)DSS,
TJ 175°C
Pulse width 300µs; duty cycle 2%.







@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)