Power MOSFET. IRF6622TRPBF Datasheet

IRF6622TRPBF MOSFET. Datasheet pdf. Equivalent

Part IRF6622TRPBF
Description DirectFET Power MOSFET
Feature www.DataSheet4U.com IRF6622PbF IRF6622TRPbF DirectFET™ Power MOSFET ‚ Typical values (unless otherw.
Manufacture International Rectifier
Datasheet
Download IRF6622TRPBF Datasheet




IRF6622TRPBF
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PD - 97244
IRF6622PbF
IRF6622TRPbF
l RoHs Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
25V max ±20V max 4.9m@ 10V 6.8m@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
11nC 3.8nC 1.6nC 7.1nC 7.7nC 1.8V
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT
SQ
MP
DirectFET™ ISOMETRIC
Description
The IRF6622PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve
the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible
with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6622PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to
reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/high efficiency DC-DC convert-
ers that power high current loads such as the latest generation of microprocessors. The IRF6622PbF has been optimized for parameters that
are critical in synchronous buck converter’s ControlFET sockets.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
Max.
25
±20
15
12
59
120
13
12
Units
V
A
mJ
A
20
ID = 15A
15
10
TJ = 125°C
5
TJ = 25°C
0
3 4 5 6 7 8 9 10
VGS, Gate -to -Source Voltage (V)
Notes:
Fig 1. Typical On-Resistance Vs. Gate Voltage
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
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6.0
5.0 VDS= 20V
VDS= 13V
4.0 VDS= 5.0V
3.0
ID= 12A
2.0
1.0
0.0
0
2 4 6 8 10 12
QG Total Gate Charge (nC)
14
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.18mH, RG = 25, IAS = 12A.
1
07/18/06



IRF6622TRPBF
IRF6622PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
Drain-to-Source Breakdown Voltage
25
∆ΒVDSS/TJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
–––
VGS(th)
Gate Threshold Voltage
1.35
VGS(th)/TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
55
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
–––
(Body Diode) d
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
17
4.9
6.8
1.8
-5.9
–––
–––
–––
–––
–––
11
2.5
1.6
3.8
3.1
5.4
7.7
1.8
9.4
16
13
4.6
1450
380
210
Typ.
–––
–––
–––
10
7.1
Max. Units
Conditions
–––
–––
6.3
8.9
2.35
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 15A i
VGS = 4.5V, ID = 12A i
V VDS = VGS, ID = 25µA
––– mV/°C
1.0
150
100
-100
–––
µA VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 13V, ID = 12A
17
––– VDS = 13V
––– nC VGS = 4.5V
––– ID = 12A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
3.1
––– VDD = 13V, VGS = 4.5V i
––– ns ID = 12A
––– Clamped Inductive Load
––– See Fig. 16 & 17
––– VGS = 0V
––– pF VDS = 13V
––– ƒ = 1.0MHz
Max. Units
Conditions
2.7 MOSFET symbol
A showing the
120 integral reverse
p-n junction diode.
1.0 V TJ = 25°C, IS = 12A, VGS = 0V i
15 ns TJ = 25°C, IF = 12A
11 nC di/dt = 500A/µs i See Fig. 18
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width 400µs; duty cycle 2%.
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