DirectFET Power MOSFET
www.DataSheet4U.com
IRF6622PbF IRF6622TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
PD -...
Description
www.DataSheet4U.com
IRF6622PbF IRF6622TRPbF
DirectFET Power MOSFET
Typical values (unless otherwise specified)
PD - 97244
l l l l l l l l l
RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
VDSS Qg
tot
VGS Qgd
3.8nC
RDS(on) Qgs2
1.6nC
RDS(on) Qoss
7.7nC
25V max ±20V max 4.9mΩ@ 10V 6.8mΩ@ 4.5V
Qrr
7.1nC
Vgs(th)
1.8V
11nC
SQ
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT MP
DirectFET ISOMETRIC
Description
The IRF6622PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6622PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and...
Similar Datasheet