Power MOSFET. IRF7101PBF Datasheet

IRF7101PBF MOSFET. Datasheet pdf. Equivalent

Part IRF7101PBF
Description Power MOSFET
Feature www.DataSheet4U.com PD - 95162 IRF7101PbF Adavanced Process Technology l Ultra Low On-Resistance l.
Manufacture International Rectifier
Datasheet
Download IRF7101PBF Datasheet




IRF7101PBF
www.DataSheet4U.com
PD - 95162
IRF7101PbF
l Adavanced Process Technology
l Ultra Low On-Resistance
l Dual N-Channel MOSFET
l Surface Mount
l Available in Tape & Reel
l Dynamic dv/dt Rating
l Fast Switching
l Lead-Free
Description
HEXFET® Power MOSFET
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
VDSS = 20V
RDS(on) = 0.10
ID = 3.5A
Fourth Generation HEXFETs from International
Rectifier utilize advanced processing techniques to
achieve the lowest possible on-resistance per silicon
area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET
Power MOSFETs are well known for, provides the
designer with an extremely efficient device for use in
a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
dual-die capability making it ideal in a variety of power
applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Sodering Temperature, for 10 seconds
Max.
3.5
2.3
14
2.0
0.016
± 12
3.0
-55 to + 150
300(1.6mm from case)
Units
A
W
W/°C
V
V/nS
°C
Thermal Resistance Ratings
RθJA
Parameter
Maximum Junction-to-Ambient „
Min.
–––
Typ.
–––
Max
62.5
Units
°C/W
10/6/04



IRF7101PBF
IRF7101PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS Internal Source Inductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
20 ––– ––– V VGS = 0V, ID = 250µA
––– 0.025 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.10 VGS = 10V, ID = 1.8A ƒ
––– ––– 0.15
VGS = 4.5V, ID = 1.0A ƒ
1.0 ––– 3.0 V VDS = VGS, ID = 250µA
1.1 ––– ––– S VDS = 15V, ID = 3.5A ƒ
––– ––– 2.0 µA VDS = 20V, VGS = 0V
––– ––– 250
VDS = 16V, VGS = 0V, TJ = 125 °C
––– ––– 100 nA VGS = 12V
––– ––– -100
VGS = - 12V
––– ––– 15
ID = 1.8A
––– ––– 2.0 nC VDS = 16V
––– ––– 3.6
VGS = 10V
––– 7.0 –––
VDD = 10V
––– 10 ––– ns ID = 1.8A
––– 24 –––
RG = 8.2
––– 30 –––
RD = 26
––– 4.0 –––
nH
Between lead,6mm(0.25in.)
from package and center G
––– 6.0 –––
of die contact
D
S
––– 320 –––
VGS = 0V
––– 250 ––– pF VDS = 15V
––– 75 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 2.0
A
showing the
integral reverse
––– ––– 14
p-n junction diode.
G
D
S
––– ––– 1.2
––– 36 54
––– 41 62
V TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
ns TJ = 25°C, IF = 1.7A
nC di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ ISD 3.5A, di/dt 90A/µs, VDD V(BR)DSS,
TJ 150°C
ƒ Pulse width 300µs; duty cycle 2%.
„ Surface mounted on FR-4 board, t 10sec.







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