AUTOMOTIVE MOSFET. IRF7484Q Datasheet

IRF7484Q MOSFET. Datasheet pdf. Equivalent

Part IRF7484Q
Description AUTOMOTIVE MOSFET
Feature www.DataSheet4U.com PD - 94803A AUTOMOTIVE MOSFET Typical Applications O O O Relay replacement An.
Manufacture International Rectifier
Datasheet
Download IRF7484Q Datasheet




IRF7484Q
www.DataSheet4U.com
PD - 94803A
AUTOMOTIVE MOSFET
Typical Applications
O Relay replacement
O Anti-lock Braking System
O Air Bag
IRF7484Q
HEXFET® Power MOSFET
VDSS RDS(on) max (mW) ID
Benefits
O Advanced Process Technology
O Ultra Low On-Resistance
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax
40V
S1
10@VGS = 7.0V
AA
8D
14A
S
Description
Specifically designed for Automotive applications, this S
Stripe Planar design of HEXFET® Power MOSFETs G
utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 150°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
27
36
45
Top View
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
IAR
EAR
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy„
Avalanche Current
Repetitive Avalanche Energy†
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
Max.
14
11
110
2.5
0.02
± 8.0
230
See Fig.16c, 16d, 19, 20
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
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1
01/04/05



IRF7484Q
IRF7484Q
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
40 ––– –––
––– 0.040 –––
––– ––– 10
1.0 ––– 2.0
40 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 69 100
––– 9.0 –––
––– 16 –––
––– 9.3 –––
––– 5.0 –––
––– 180 –––
––– 58 –––
––– 3520 –––
––– 660 –––
––– 76 –––
Units
V
V/°C
m
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 7.0V, ID = 14A ‚
VDS = VGS, ID = 250µA
VDS = 10V, ID = 14A
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 125°C
VGS = 8.0V
VGS = -8.0V
ID = 14A
VDS = 32V
VGS = 7.0V
VDD = 20V ‚
ID = 1.0A
RG = 6.2
VGS = 7.0V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
59
110
Max.
2.3
110
1.3
89
170
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 2.3A, VGS = 0V
TJ = 25°C, IF = 2.3A
di/dt = 100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ Surface mounted on 1 in square Cu board.
„ Starting TJ = 25°C, L = 2.3mH, RG = 25,
IAS = 14A. (See Figure 12).
… ISD 14A, di/dt 140A/µs, VDD V(BR)DSS,
TJ 150°C.
† Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
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