Power MOSFET. IRF7484PBF Datasheet

IRF7484PBF MOSFET. Datasheet pdf. Equivalent

Part IRF7484PBF
Description Power MOSFET
Feature www.DataSheet4U.com PD - 95281 IRF7484PbF Typical Applications l l l l Relay replacement Anti-loc.
Manufacture International Rectifier
Datasheet
Download IRF7484PBF Datasheet




IRF7484PBF
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PD - 95281
IRF7484PbF
Typical Applications
l Relay replacement
l Anti-lock Braking System
l Air Bag
l Lead-Free
HEXFET® Power MOSFET
VDSS RDS(on) max (mW) ID
40V 10@VGS = 7.0V 14A
Benefits
l Advanced Process Technology
l Ultra Low On-Resistance
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
S
S
Description
Specifically designed for Automotive applications, this S
Stripe Planar design of HEXFET® Power MOSFETs G
utilizes the latest processing techniques to achieve
extremely low on-resistance per silicon area. Additional
features of this HEXFET power MOSFET are a 150°C
junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a
wide variety of other applications.
18
27
36
45
Top View
AA
D
D
D
D
SO-8
Absolute Maximum Ratings
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
EAS
IAR
EAR
TJ, TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipationƒ
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy„
Avalanche Current
Repetitive Avalanche Energy†
Junction and Storage Temperature Range
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient ƒ
Max.
14
11
110
2.5
0.02
± 8.0
230
See Fig.16c, 16d, 19, 20
-55 to + 150
Units
A
W
W/°C
V
mJ
A
mJ
°C
Typ.
–––
–––
Max.
20
50
Units
°C/W
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1
09/21/04



IRF7484PBF
IRF7484PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
40 ––– –––
––– 0.040 –––
––– ––– 10
1.0 ––– 2.0
V
V/°C
m
V
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 7.0V, ID = 14A ‚
VDS = VGS, ID = 250µA
40 ––– ––– S VDS = 10V, ID = 14A
––– ––– 20 µA VDS = 40V, VGS = 0V
––– ––– 250
VDS = 32V, VGS = 0V, TJ = 125°C
––– ––– 200 nA VGS = 8.0V
––– ––– -200
VGS = -8.0V
––– 69 100
ID = 14A
––– 9.0 ––– nC VDS = 32V
––– 16 –––
VGS = 7.0V
––– 9.3 –––
VDD = 20V ‚
––– 5.0 ––– ns ID = 1.0A
––– 180 –––
RG = 6.2
––– 58 –––
VGS = 7.0V
––– 3520 –––
VGS = 0V
––– 660 ––– pF VDS = 25V
––– 76 –––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 2.3
showing the
A
––– ––– 110
integral reverse
p-n junction diode.
G
––– ––– 1.3 V TJ = 25°C, IS = 2.3A, VGS = 0V
––– 59 89 ns TJ = 25°C, IF = 2.3A
––– 110 170 nC di/dt = 100A/µs ‚
D
S
‚
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Pulse width 400µs; duty cycle 2%.
ƒ Surface mounted on 1 in square Cu board.
„ Starting TJ = 25°C, L = 2.3mH, RG = 25,
IAS = 14A. (See Figure 12).
… ISD 14A, di/dt 140A/µs, VDD V(BR)DSS,
TJ 150°C.
† Limited by TJmax , see Fig.16c, 16d, 19, 20 for typical repetitive
avalanche performance.
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