IRF9410PBF

www.DataSheet4U.com PD - 95260 IRF9410PbF l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET S S S G 1 8 A A D D D D 2 7 VDSS = 30V RDS(on) = 0.030Ω 3 6 4 5 Top View Recommended upgrade: IRF7403 or IRF7413 Lower profile/smaller equivalent: IRF7603 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… TA = 25°C TA = 70°C Maximum Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipatio...