Power MOSFET. IRF9410PBF Datasheet

IRF9410PBF MOSFET. Datasheet pdf. Equivalent

Part IRF9410PBF
Description Power MOSFET
Feature www.DataSheet4U.com PD - 95260 IRF9410PbF l l l l l l l Generation V Technology Ultra Low On-Resi.
Manufacture International Rectifier
Datasheet
Download IRF9410PBF Datasheet




IRF9410PBF
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PD - 95260
l Generation V Technology
l Ultra Low On-Resistance
l N-Channel MOSFET
l Surface Mount
l Very Low Gate Charge and
Switching Losses
l Fully Avalanche Rated
l Lead-Free
IRF9410PbF
S1
S2
S3
G4
HEXFET® Power MOSFET
AA
8D
7D
VDSS = 30V
6D
5 D RDS(on) = 0.030
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
Recommended upgrade: IRF7403 or IRF7413
Lower profile/smaller equivalent: IRF7603
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infra red, or wave soldering techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation …
Single Pulse Avalanche Energy ‚
TA = 25°C
TA = 70°C
VDS
VGS
ID
IDM
IS
PD
EAS
30
± 20
7.0
5.8
37
2.8
2.5
1.6
70
Avalanche Current
IAR 4.2
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ
EAR
dv/dt
0.25
5.0
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient …
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Symbol
RθJA
Limit
50
Units
V
A
W
mJ
A
mJ
V/ ns
°C
Units
°C/W
1
09/21/04



IRF9410PBF
IRF9410PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max.
30 ––– –––
––– 0.024 –––
––– 0.024 0.030
––– 0.032 0.040
––– 0.037 0.050
1.0 ––– –––
––– 14 –––
––– ––– 2.0
––– ––– 25
––– ––– 100
––– ––– -100
––– 18 27
––– 2.4 3.6
––– 4.9 7.4
––– 7.3 15
––– 8.3 17
––– 23 46
––– 17 34
––– 550 –––
––– 260 –––
––– 100 –––
Units
V
V/°C
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 7.0A „
VGS = 5.0V, ID = 4.0A „
VGS = 4.5V, ID = 3.5A „
VDS = VGS, ID = 250µA
VDS = 15V, ID = 7.0A
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
VGS = 20V
VGS = -20V
ID = 2.0A
VDS = 15V
VGS = 10V, See Fig. 10 „
VDD = 25V
ID = 1.0A
RG = 6.0Ω, VGS = 10V
RD = 25„
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.78
40
63
Max.
2.8
37
1.0
80
130
Units
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
G
p-n junction diode.
TJ = 25°C, IS = 2.0A, VGS = 0V ƒ
TJ = 25°C, IF = 2.0A
di/dt = 100A/µs ƒ
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 6.6mH
RG = 25, IAS = 4.6A.
… Surface mounted on FR-4 board, t 10sec.
ƒ ISD 4.6A, di/dt 120A/µs, VDD V(BR)DSS,
TJ 150°C
„ Pulse width 300µs; duty cycle 2%.
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