Power MOSFET. IRFBA32N50K Datasheet

IRFBA32N50K MOSFET. Datasheet pdf. Equivalent

Part IRFBA32N50K
Description Power MOSFET
Feature www.DataSheet4U.com PD- 93924 PROVISIONAL IRFBA32N50K HEXFET® Power MOSFET SMPS MOSFET Applicatio.
Manufacture International Rectifier
Datasheet
Download IRFBA32N50K Datasheet



IRFBA32N50K
www.DataSheet4U.com
PD- 93924
PROVISIONAL IRFBA32N50K
SMPS MOSFET HEXFET® Power MOSFET
Applications
l Telecom and Data-Com off-Line SMPS
l UninterruptIble Power Supply
Benefits
l Low On-Resistance
l High Speed Switching
l Low Gate Drive Current Due to Improved
Gate Charge Characteristics
l Improved Avalanche Ruggedness and
Dynamic dv/dt, Fully Characterized
Avalanche Voltage and Current
VDSS
500V
RDS(on)
0.14
Super-220™
ID
32A
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Recommended clip force
Max.
32
20
128
360
2.9
± 30
5.0
-55 to + 150
300
20
Units
A
W
W/°C
V
V/ns
°C
N
Diode Characteristics
Symbol
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 32
A showing the
integral reverse
––– ––– 128
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 32A, VGS = 0V „
––– 650 ––– ns TJ = 125°C, IF = 32A
––– 9.0 ––– µC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Typical SMPS Topologies
l Hard Switching Full and Half Bridge Circuits
l Hard Switching Single Transistor Circuits
l Power Factor Correction Circuits
www.irf.com
1
6/2/00



IRFBA32N50K
IRFBA32N50K
PROVISIONAL
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
IDSS Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
IGSS Gate-to-Source Reverse Leakage
Min. Typ. Max. Units
Conditions
500 ––– ––– V VGS = 0V, ID = 250µA
––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA†
––– ––– 0.14 VGS = 10V, ID = 19A „
3.5 ––– 5.5 V VDS = VGS, ID = 250µA
––– ––– 50 µA VDS = 500V, VGS = 0V
––– ––– 250 µA VDS = 400V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 30V
––– ––– -100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max.
gfs Forward Transconductance
12 ––– –––
Qg Total Gate Charge
––– ––– 195
Qgs Gate-to-Source Charge
––– ––– 75
Qgd Gate-to-Drain ("Miller") Charge
––– ––– 90
td(on)
Turn-On Delay Time
––– 20 –––
tr Rise Time
––– 60 –––
td(off)
Turn-Off Delay Time
––– 45 –––
tf Fall Time
––– 40 –––
Ciss Input Capacitance
––– 5300 –––
Coss
Output Capacitance
––– 540 –––
Crss Reverse Transfer Capacitance
––– 33 –––
Units
S
nC
ns
pF
Conditions
VDS = 50V, ID = 19A
ID = 32A
VDS = 400V
VGS = 10V, „
VDD = 250V
ID = 32A
RG = 4.3
VGS = 10V, „
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
EAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
–––
–––
Typ.
–––
0.50
–––
Max.
760
32
36
Units
mJ
A
mJ
Max.
0.35
–––
58
Units
°C/W
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 4.3mH, RG = 25,
IAS = 32A,
ƒ ISD 32A, di/dt TBDA/µs, VDD V(BR)DSS,
TJ 150°C
2
„ Pulse width 400µs; duty cycle 2%.
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