Power MOSFET. IRFP4227PBF Datasheet

IRFP4227PBF MOSFET. Datasheet pdf. Equivalent

Part IRFP4227PBF
Description Power MOSFET
Feature www.DataSheet4U.com PD - 97070 PDP SWITCH Features l Advanced Process Technology l Key Parameters .
Manufacture International Rectifier
Datasheet
Download IRFP4227PBF Datasheet




IRFP4227PBF
PDP SWITCH
PD - 97070A
IRFP4227PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS max
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100°C
200
240
21
130
TJ max
175
DD
V
V
m:
A
°C
G
S
S
D
G
TO-247AC
GDS
Gate
Drain
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
fJunction-to-Case
Case-to-Sink, Flat, Greased Surface
fJunction-to-Ambient
Notes  through † are on page 8
www.irf.com
Max.
±30
65
46
260
130
330
190
2.2
-40 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
V
A
W
W/°C
°C
N
Units
°C/W
1
09/14/07



IRFP4227PBF
IRFP4227PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
200 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/TJ
RDS(on)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
e––– 170 ––– mV/°C Reference to 25°C, ID = 1mA
––– 21
25 mVGS = 10V, ID = 46A
VGS(th)
Gate Threshold Voltage
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
VGS(th)/TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– -13 ––– mV/°C
––– ––– 20
µA VDS = 200V, VGS = 0V
––– ––– 1.0 mA VDS = 200V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
49 ––– ––– S VDS = 25V, ID = 46A
e––– 70 98 nC VDD = 100V, ID = 46A, VGS = 10V
Qgd
td(on)
Gate-to-Drain Charge
Turn-On Delay Time
––– 23 –––
––– 33 –––
ÃeVDD = 100V, VGS = 10V
tr Rise Time
––– 20 ––– ns ID = 46A
td(off)
Turn-Off Delay Time
––– 21 –––
RG = 2.5
tf Fall Time
––– 31 –––
See Fig. 22
tst
Shoot Through Blocking Time
100 ––– ––– ns VDD = 160V, VGS = 15V, RG= 4.7
EPULSE
Energy per Pulse
––– 570 –––
L = 220nH, C= 0.4µF, VGS = 15V
µJ VDS = 160V, RG= 4.7Ω, TJ = 25°C
––– 910 –––
L = 220nH, C= 0.4µF, VGS = 15V
VDS = 160V, RG= 4.7Ω, TJ = 100°C
Ciss Input Capacitance
Coss Output Capacitance
––– 4600 –––
––– 460 –––
VGS = 0V
pF VDS = 25V
Crss
Coss eff.
Reverse Transfer Capacitance
Effective Output Capacitance
––– 91 –––
––– 360 –––
ƒ = 1.0MHz,
VGS = 0V, VDS = 0V to 160V
LD Internal Drain Inductance
––– 5.0 –––
Between lead,
D
nH 6mm (0.25in.)
LS Internal Source Inductance
––– 13 –––
from package
G
and center of die contact
S
Avalanche Characteristics
EAS
EAR
VDS(Avalanche)
IAS
Parameter
dSingle Pulse Avalanche Energy
™Repetitive Avalanche Energy
ÙRepetitive Avalanche Voltage
ÃdAvalanche Current
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Typ.
Max.
Units
––– 140 mJ
––– 33 mJ
240 ––– V
––– 39 A
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
100
430
Max. Units
Conditions
65 MOSFET symbol
A showing the
260 integral reverse
p-n junction diode.
e1.3 V TJ = 25°C, IS = 46A, VGS = 0V
150 ns TJ = 25°C, IF = 46A, VDD = 50V
e640 nC di/dt = 100A/µs
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