PDP SWITCH. IRFP4229PBF Datasheet

IRFP4229PBF SWITCH. Datasheet pdf. Equivalent

Part IRFP4229PBF
Description PDP SWITCH
Feature www.DataSheet4U.com PD - 97079A PDP SWITCH Features l Advanced Process Technology l Key Parameters.
Manufacture International Rectifier
Datasheet
Download IRFP4229PBF Datasheet




IRFP4229PBF
www.DataSheet4U.com
PDP SWITCH
PD - 97079A
IRFP4229PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for PDP Sustain,
Energy Recovery and Pass Switch Applications
l Low EPULSE Rating to Reduce Power
Dissipation in PDP Sustain, Energy Recovery
and Pass Switch Applications
l Low QG for Fast Response
l High Repetitive Peak Current Capability for
Reliable Operation
l Short Fall & Rise Times for Fast Switching
l175°C Operating Junction Temperature for
Improved Ruggedness
l Repetitive Avalanche Capability for Robustness
and Reliability
Key Parameters
VDS min
250
VDS (Avalanche) typ.
300
RDS(ON) typ. @ 10V
38
IRP max @ TC= 100°C
87
TJ max
175
DD
V
V
m:
A
°C
G
S
S
D
G
TO-247AC
G
Gate
D
Drain
S
Source
Description
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC
RθCS
RθJA
Parameter
fJunction-to-Case
Case-to-Sink, Flat, Greased Surface
fJunction-to-Ambient
Max.
±30
44
31
180
87
310
150
2.0
-40 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
0.24
–––
Max.
0.49
–––
40
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes  through … are on page 8
www.irf.com
1
01/29/07



IRFP4229PBF
IRFP4229PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
250 ––– ––– V VGS = 0V, ID = 250µA
––– 210 ––– mV/°C Reference to 25°C, ID = 1mA
––– 38
e46 mVGS = 10V, ID = 26A
VGS(th)
Gate Threshold Voltage
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
VGS(th)/TJ
Gate Threshold Voltage Coefficient
––– -14 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 20 µA VDS = 250V, VGS = 0V
––– ––– 1.0 mA VDS = 250V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
83 ––– ––– S VDS = 25V, ID = 26A
e––– 72 110 nC VDD = 125V, ID = 26A, VGS = 10V
Qgd Gate-to-Drain Charge
––– 26 –––
tst
Shoot Through Blocking Time
100 ––– ––– ns VDD = 200V, VGS = 15V, RG= 4.7
EPULSE
Energy per Pulse
––– 790 –––
L = 220nH, C= 0.3µF, VGS = 15V
µJ VDS = 200V, RG= 4.7Ω, TJ = 25°C
––– 1390 –––
L = 220nH, C= 0.3µF, VGS = 15V
VDS = 200V, RG= 4.7Ω, TJ = 100°C
Ciss Input Capacitance
––– 4560 –––
VGS = 0V
Coss Output Capacitance
––– 390 ––– pF VDS = 25V
Crss
Coss eff.
Reverse Transfer Capacitance
Effective Output Capacitance
––– 100 –––
––– 290 –––
ƒ = 1.0MHz,
VGS = 0V, VDS = 0V to 200V
LD Internal Drain Inductance
––– 5.0 –––
Between lead,
D
nH 6mm (0.25in.)
LS Internal Source Inductance
––– 13 –––
from package
G
and center of die contact
S
Avalanche Characteristics
EAS
EAR
VDS(Avalanche)
IAS
Parameter
dSingle Pulse Avalanche Energy
™Repetitive Avalanche Energy
ÙRepetitive Avalanche Voltage
ÃdAvalanche Current
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Typ.
Max.
Units
––– 300 mJ
––– 31 mJ
300 ––– V
––– 26 A
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
190
840
Max. Units
Conditions
44 MOSFET symbol
A showing the
180 integral reverse
1.3
290
1260
p-n junction diode.
eV TJ = 25°C, IS = 26A, VGS = 0V
ns TJ = 25°C, IF = 26A, VDD = 50V
enC di/dt = 100A/µs
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