PDP SWITCH. IRFP4242PBF Datasheet

IRFP4242PBF SWITCH. Datasheet pdf. Equivalent

Part IRFP4242PBF
Description PDP SWITCH
Feature www.DataSheet4U.com PD - 96966A PDP MOSFET Features l Advanced process technology l Key parameters.
Manufacture International Rectifier
Datasheet
Download IRFP4242PBF Datasheet




IRFP4242PBF
www.DataSheet4U.com
PDP MOSFET
PD - 96966A
IRFP4242PbF
Features
l Advanced process technology
l Key parameters optimized for PDP Sustain &
Energy Recovery applications
l Low EPULSE rating to reduce the power
dissipation in Sustain & ER applications
l Low QG for fast response
l High repetitive peak current capability for
reliable operation
l Short fall & rise times for fast switching
l175°C operating junction temperature for
improved ruggedness
l Repetitive avalanche capability for robustness
and reliability
Key Parameters
VDS min
VDS (Avalanche) typ.
RDS(ON) typ. @ 10V
IRP max @ TC= 100°C
TJ max
300
360
49
93
175
DD
V
V
m:
A
°C
G
S
S
D
G
TO-247AC
GDS
Description
G ate
D rain
Source
This HEXFET® Power MOSFET is specifically designed for Sustain; Energy Recovery & Pass switch
applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve
low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175°C
operating junction temperature and high repetitive peak current capability. These features combine to
make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Absolute Maximum Ratings
Parameter
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
IRP @ TC = 100°C
PD @TC = 25°C
PD @TC = 100°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
cPulsed Drain Current
gRepetitive Peak Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
fRθJC Junction-to-Case
Max.
±30
46
33
190
93
430
210
2.9
-40 to + 175
300
x x10lb in (1.1N m)
Typ.
–––
Max.
0.35
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes  through … are on page 8
www.irf.com
1
7/25/05



IRFP4242PBF
IRFP4242PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
300 ––– ––– V VGS = 0V, ID = 250µA
∆ΒVDSS/TJ
Breakdown Voltage Temp. Coefficient ––– 220 ––– mV/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance ––– 49 59 mVGS = 10V, ID = 33A e
VGS(th)
Gate Threshold Voltage
3.0 ––– 5.0
V VDS = VGS, ID = 250µA
VGS(th)/TJ
Gate Threshold Voltage Coefficient
––– -15 ––– mV/°C
IDSS
Drain-to-Source Leakage Current
––– ––– 5.0 µA VDS = 240V, VGS = 0V
––– ––– 150
VDS = 240V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
78 ––– ––– S VDS = 25V, ID = 33A
Qg Total Gate Charge
––– 165 247 nC VDD = 150V, ID = 33A, VGS = 10Ve
Qgd Gate-to-Drain Charge
––– 61 –––
tst
Shoot Through Blocking Time
100 ––– ––– ns VDD = 240V, VGS = 15V, RG= 5.1
EPULSE
Energy per Pulse
––– 1960 –––
L = 220nH, C= 0.4µF, VGS = 15V
µJ VDS = 240V, RG= 4.7Ω, TJ = 25°C
––– 3740 –––
L = 220nH, C= 0.4µF, VGS = 15V
VDS = 240V, RG= 4.7Ω, TJ = 100°C
Ciss Input Capacitance
––– 7370 –––
VGS = 0V
Coss Output Capacitance
––– 520 ––– pF VDS = 25V
Crss
Reverse Transfer Capacitance
––– 220 –––
ƒ = 1.0MHz,
See Fig.9
Coss eff.
Effective Output Capacitance
––– 320 –––
VGS = 0V, VDS = 0V to 240V
LD Internal Drain Inductance
––– 5.0 –––
Between lead,
D
LS Internal Source Inductance
nH 6mm (0.25in.)
––– 13 –––
from package
G
and center of die contact
S
Avalanche Characteristics
Parameter
EAS
EAR
VDS(Avalanche)
IAS
Single Pulse Avalanche Energyd
Repetitive Avalanche Energy c
Repetitive Avalanche Voltage c
Avalanche Current d
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) c
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Typ.
Max.
Units
––– 700 mJ
––– 43 mJ
360 ––– V
––– 33 A
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
300
2330
Max. Units
Conditions
46 MOSFET symbol
A showing the
190 integral reverse
p-n junction diode.
1.0 V TJ = 25°C, IS = 33A, VGS = 0V e
450 ns TJ = 25°C, IF = 33A, VDD = 50V
3500 nC di/dt = 100A/µs e
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