Power MOSFET. IRFRU3707PBF Datasheet

IRFRU3707PBF MOSFET. Datasheet pdf. Equivalent

Part IRFRU3707PBF
Description Power MOSFET
Feature www.DataSheet4U.com PD - 95019A SMPS MOSFET Applications l High Frequency DC-DC Isolated Converter.
Manufacture International Rectifier
Datasheet
Download IRFRU3707PBF Datasheet




IRFRU3707PBF
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PD - 95019A
SMPS MOSFET
IRFR3707PbF
IRFRU3707PbF
Applications
l High Frequency DC-DC Isolated
Converters with Synchronous Rectification
for Telecom and Industrial use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
HEXFET® Power MOSFET
VDSS
30V
RDS(on) max
13m
ID
61A„
Benefits
l Ultra-Low RDS(on)
l Very Low Gate Impedance
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRFR3707
I-Pak
IRFU3707
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 20
61 „
51 „
244
87
61
0.59
-55 to + 175
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Max.
1.73
50
110
Units
V
V
A
W
W
mW/°C
°C
Units
°C/W
Notes  through „ are on page 9
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1
12/13/04



IRFRU3707PBF
IRFR/U3707PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage
30
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient –––
RDS(on)
–––
Static Drain-to-Source On-Resistance –––
VGS(th)
Gate Threshold Voltage
1.0
IDSS Drain-to-Source Leakage Current
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
––– –––
0.027 –––
9.7 13
13.2 17.5
––– 3.0
––– 20
––– 100
––– 200
––– -200
V
V/°C
m
V
µA
nA
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 15A ƒ
VGS = 4.5V, ID = 12A ƒ
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 16V
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
37 ––– –––
––– 19 –––
––– 8.2 –––
––– 6.3 –––
––– 18 27
––– 8.5 –––
––– 78 –––
––– 11.8 –––
––– 3.3 –––
––– 1990 –––
––– 707 –––
––– 50 –––
S VDS = 15V, ID = 49.6A
ID = 24.8A
nC VDS = 15V
VGS = 4.5V ƒ
VGS = 0V, VDS = 15V
VDD = 15V
ns ID = 24.8A
RG = 1.8
VGS = 4.5V ƒ
VGS = 0V
VDS = 15V
pF ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy‚
Avalanche Current
Typ.
–––
–––
Max.
213
61
Units
mJ
A
Diode Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
2
Min.
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
–––
0.88
0.8
39
49
42
62
Max.
61„
244
1.3
–––
59
74
63
93
Units
A
V
ns
nC
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 31A, VGS = 0V ƒ
TJ = 125°C, IS = 31A, VGS = 0V ƒ
TJ = 25°C, IF = 31A, VR=20V
di/dt = 100A/µs ƒ
TJ = 125°C, IF = 31A, VR=20V
di/dt = 100A/µs ƒ
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