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DC COMPONENTS CO., LTD.
R
LB124E
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high voltage, high speed switching circuits, and amplifier applications .
TO-220AB
.405(10.28) .380(9.66) .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .295(7.49) .220(5.58)
Pinning
1 = Base 2 = Collector 3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pluse) Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature
o
Symbol VCBO VCEO VEBO IC IC PD TJ TSTG
Rating 600 400 8 2 4 35 +150 -55 to +150
Unit V V V A A W
o o
.625(15.87) .570(14.48) 1 2 3
.350(8.90) .330(8.38)
.640 Typ (16.25)
.055(1.40) .045(1.14) .037(0.95) .030(0.75)
.562(14.27) .500(12.70)
.100 Typ (2.54)
.024(0.60) .014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3
Min 600 400 8 10 10 6
Typ -
Max 10 10 0.3 0.8 0.9 1.2 40 -
Unit V V V µA µA V V V V MHz
Test Conditions IC=1mA, IE=0 IC=10mA, IB=0 IE=1mA, IC=0 VCB=600V, IE=0 VEB=9V, IC=0 IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.1A, IB=10mA IC=0.3A, IB=30mA IC=0.3A, VCE=5V IC=0.5A, VCE=5V IC=1A, VCE=5V IC=0.3A, VCE=10V, f=100MHz
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1)
DC Current Gain
(1)
Transition Frequency (1)Pulse Test: Pulse Width
fT 15 380µs, Duty Cycle 2%
Classification of hFE1
Rank Range B1 10~17 B2 13~22 B3 18~27 B4 23~32 B5 28~37 B6 33~40
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