Square RBSOA. MII145-12A3 Datasheet

MII145-12A3 RBSOA. Datasheet pdf. Equivalent

Part MII145-12A3
Description IGBT Modules - Short Circuit SOA Capability Square RBSOA
Feature www.DataSheet4U.com MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 IGBT Modules Short Circuit SOA Capa.
Manufacture IXYS Corporation
Datasheet
Download MII145-12A3 Datasheet




MII145-12A3
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IGBT Modules
Short Circuit SOA Capability
Square RBSOA
MII 145-12 A3 MID 145-12 A3
MDI 145-12 A3
IC25 = 160 A
VCES
= 1200 V
VCE(sat) typ. = 2.2 V
MII
1
MID
1
MDI
1
7
63
7
36
3
44
5 25 2
2
2
1
4
5
36
7
E 72873
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC80
ICM
tSC
(SCSOA)
RBSOA
Ptot
TJ
Tstg
VISOL
Md
Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 20 kW
Continuous
Transient
TC = 25°C
TC = 80°C
TC = 80°C, tp = 1 ms
VGE = ±15 V, VCE = VCES, TJ = 125°C
RG = 6.8 W, non repetitive
VGE= ±15 V, TJ = 125°C, RG = 6.8 W
Clamped inductive load, L = 100 mH
TC = 25°C
50/60 Hz, RMS t = 1 min
IISOL £ 1 mA
t=1s
Insulating material: Al2O3
Mounting torque (module)
(teminals)
dS
dA
a
Weight
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
Typical
Data according to a single IGBT/FRED unless otherwise stated.
Maximum Ratings
1200
1200
±20
±30
160
110
220
10
V
V
V
V
A
A
A
ms
ICM = 200
VCEK < VCES
700
150
-40 ... +150
4000
4800
A
W
°C
°C
V~
V~
2.25-2.75
20-25
2.5-3.7
22-33
12.7
9.6
50
130
4.6
Nm
lb.in.
Nm
lb.in.
mm
mm
m/s2
g
oz.
Features
q NPT IGBT technology
q low saturation voltage
q low switching losses
q switching frequency up to 30 kHz
q square RBSOA, no latch up
q high short circuit capability
q positive temperature coefficient for
easy parallelling
q MOS input, voltage controlled
q ultra fast free wheeling diodes
q package with DCB ceramic base plate
q isolation voltage 4800 V
q UL registered E72873
Advantages
q space and weight savings
q reduced protection circuits
Typical Applications
q AC and DC motor control
q AC servo and robot drives
q power supplies
q welding inverters
© 2000 IXYS All rights reserved
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MII145-12A3
MII 145-12 A3 MID 145-12 A3
MDI 145-12 A3
Symbol
V(BR)CES
VGE(th)
ICES
IGES
VCE(sat)
Cies
Coes
Cres
td(on)
tr
td(off)
tf
Eon
Eoff
RthJC
RthJS
Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE = 0 V
IC = 4 mA, VCE = VGE
VCE = VCES
VCE = 0 V, VGE = ±20 V
IC = 100 A, VGE = 15 V
TJ = 25°C
TJ = 125°C
VCE = 25 V, VGE = 0 V, f = 1 MHz
Inductive load, TJ = 125°C
IC = 100 A, VGE = ±15 V
VCE = 600 V, RG = 6.8 W
with heatsink compound
1200
4.5
V
6.5 V
6 mA
9 mA
±400 nA
2.2 2.7 V
6.5 nF
1 nF
0.5 nF
100 ns
60 ns
600 ns
90 ns
16 mJ
15 mJ
0.18 K/W
0.36 K/W
Dimensions in mm (1 mm = 0.0394")
Reverse Diode (FRED)
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VF
IF
IRM
trr
RthJC
RthJS
IF = 100 A, VGE = 0 V,
IF = 100 A, VGE = 0 V, TJ = 125°C
TC = 25°C
TC = 80°C
IF = 100 A, VGE = 0 V, -diF/dt = 600 A/ms
TJ = 125°C, VR = 600 V
with heatsink compound
2.4 2.6 V
1.9 2.0 V
150 A
95 A
62 A
200 ns
0.45 K/W
0.9 K/W
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.3 V; R0 = 12.0 mW
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 6.5 mW
Thermal Response
© 2000 IXYS All rights reserved
IGBT (typ.)
Cth1 = 0.25 J/K; Rth1 = 0.175 K/W
Cth2 = 0.58 J/K; Rth2 = 0.004 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.14 J/K; Rth1 = 0.443 K/W
Cth2 = 0.26 J/K; Rth2 = 0.009 K/W
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