PLANAR TRANSISTOR. MID31C Datasheet

MID31C TRANSISTOR. Datasheet pdf. Equivalent

Part MID31C
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Feature www.DataSheet4U.com DC COMPONENTS CO., LTD. R MID31C DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICA.
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MID31C
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
MID31C
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in general purpose amplifier and
switching applications.
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation(TC=25oC)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
100
100
5
3
15
+150
-55 to +150
Unit
V
V
V
A
W
oC
oC
TO-251
.268(6.80)
.252(6.40)
.217(5.50)
.205(5.20)
.022(0.55)
.018(0.45)
.284(7.20)
.268(6.80)
2
.063(1.60)
.055(1.40)
123
.035 Max
(0.90)
.256
(6.50)
Min
.032
(0.80)
Max
.181 Typ
(4.60)
.059(1.50)
.035(0.90)
.024(0.60)
.018(0.45)
.095(2.40)
.087(2.20)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol
Collector-Base Breakdown Volatge
BVCBO
Collector-Emitter Breakdown Voltage
BVCEO
Collector Cutoff Current
ICES
ICEO
Emitter Cutoff Current
Collector-Emitter Saturation Voltage(1)
Base-Emitter On Voltage(1)
IEBO
VCE(sat)
VBE(on)
DC Current Gain(1)
hFE1
hFE2
Transition Frequency
fT
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Min
100
100
-
-
-
-
-
25
10
3
Typ
-
-
-
-
-
-
-
-
-
-
Max Unit
Test Conditions
- V IC=1mA, IE=0
- V IC=30mA, IB=0
20 µA VCE=100V, VEB=0
50 µA VCE=60V, IB=0
1 mA VEB=5V, IC=0
1.2 V IC=3A, IB=375mA
1.8 V IC=3A, VCE=4V
- - IC=1A, VCE=4V
50 - IC=3A, VCE=4V
- MHz IC=0.5A, VCE=10V, f=1MHz







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