PLANAR TRANSISTOR. MJE13003D Datasheet

MJE13003D TRANSISTOR. Datasheet pdf. Equivalent

Part MJE13003D
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Feature www.DataSheet4U.com DC COMPONENTS CO., LTD. R MJE13003D DISCRETE SEMICONDUCTORS TECHNICAL SPECIF.
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MJE13003D
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
MJE13003D
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for high-voltage, high-speed power switching
inductive circuits where fall time is critical.
TO-126ML
Pinning
1 = Base
2 = Collector
3 = Emitter
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol Rating
Collector-Emitter Voltage
VCEV
VCEO
700
400
Emitter-Base Voltage
VEBO
9
Collector Current
IC 1.5
Base Current
Total Power Dissipation(TC=25oC)
IB
PD
0.75
40
Junction Temperature
TJ +150
Storage Temperature
TSTG -55 to +150
Unit
V
V
V
A
A
W
oC
oC
.163(4.12)
.153(3.87)
.044(1.12)
.034(0.87)
.146(3.70)
.136(3.44)
.148(3.75)
.138(3.50)
.060(1.52)
.050(1.27)
.300(7.62)
.290(7.37)
123
.084(2.12)
.074(1.87)
.591(15.0)
.551(14.0)
.180
(4.56)
Typ
.056(1.42)
.046(1.17)
.033(0.84)
.027(0.68)
.090
(2.28)
Typ
.123(3.12)
.113(2.87)
.084(2.14)
.074(1.88)
.027(0.69)
.017(0.43)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min Typ Max Unit
Test Conditions
BVCEV 700
-
-
V IC=1mA, VBE(off)=1.5V
Collector-Emitter Breakdown Voltage
BVCEO 400
-
-
V IC=10mA
Collector Cutoff Current
ICEV
-
-
1 mA VCE=700V, VBE(off)=1.5V
Emitter Cutoff Current
IEBO
-
-
1 mA VEB=9V
Collector-Emitter Saturation Voltage(1)
VCE(sat)1
VCE(sat)2
-
-
- 0.5 V IC=0.5A, IB=0.1A
- 1 V IC=1A, IB=0.25A
VCE(sat)3
-
-
3
V IC=1.5A, IB=0.5A
Base-Emitter Saturation Voltage(1)
VBE(sat)1
VBE(sat)2
-
-
- 1 V IC=0.5A, IB=0.1A
- 1.2 V IC=1A, IB=0.25A
DC Current Gain(1)
hFE1
hFE2
8
5
- 40
- 25
- IC=0.5A, VCE=2V
- IC=1A, VCE=2V
(1)Pulse Test: Pulse Width 380ยตs, Duty Cycle 2%







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