MJE13003D

www.DataSheet4U.com DC COMPONENTS CO., LTD. R MJE13003D DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. TO-126ML Pinning 1 = Base 2 = Collector 3 = Emitter .148(3.75) .138(3.50) .163(4.12) .153(3.87) .044(1.12) .034(0.87) .060(1.52) .050(1.27) .146(3.70) .136(3.44) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation(TC=25 C) Junction Temperature Storage Temperature o .123(3.12) .113(2.87) Symbol VCEV VCEO VEBO IC IB PD TJ TSTG Rating 700 400 9 1.5 0.75 40 +150 -55 to +150 Unit V V V A A W o o .300(7.62) .290(7.37) 1 2 3 .084(2.12) .074(1.87) .056(1.42) .046(1.17) .033(0.84) .027(0.68) .180 Typ (4.56) .090 Typ (2.28) Dimensions in inches and (millimeters) .084(2.14) .074(1.88) .591(15.0) .551(14.0) .027(0.69) .017(0.43) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCEV BVCEO ICEV IEBO VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat)1 VBE(sat)2 hFE1 hFE2 380µs, Duty Cycle 2% Min 700 400 8 5 Typ - Max 1 1 0.5 1 3 1 1.2 40 25 Unit V V mA mA V V V V V - Test Conditions IC=1mA, VBE(off)=1.5V IC=10mA VCE=700V, VBE(off)=1.5V VEB=9V IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=1.5A, IB=0.5A IC=0.5A, IB=0.1A IC=1A, IB=0.25A IC=0.5A, VCE=2V IC=1A, VCE=2V Col...