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DISCRETE SEMICONDUCTORS
MML1225 MXL1225
TECHNICAL SPECIFICATIONS OF SE...
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R
DISCRETE SEMICONDUCTORS
MML1225 MXL1225
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS VOLTAGE RANGE - 300 to 380 Volts CURRENT - 0.8 Ampere
Description
These Silicon Controlled Rectifiers are high performance planar diffused P
NPN devices. They are intended for low cost, high volume applications.
SOT-89
.063(1.60) .055(1.40)
Pinning
1 = Gate 2 = Anode 3 = Cathode
.066(1.70) .059(1.50)
Absolute Maximum Ratings(TA=25
Characteristic Peak Repetitive Off-State Voltage(RGK=1KΩ) Peak Gate Current(10µs Max) Gate Power Dissipation(20ms Max) Reverse Peak Gate Voltage Operating Junction Temperature Storage Temperature MML1225 MXL1225 VDRM
o
C)
Rating 300 380 0.8 1 0.1 8 -40 to +125 -40 to +125 Unit V A A W V
o o
.167(4.25) .159(4.05) 1 2 3
.102(2.60) .095(2.40)
Symbol
.020(0.51) .014(0.36)
On-State RMS Current(TC=40oC)
IT(RMS) IGM PG(AV) VGRM TJ TSTG
.060(1.52) .058(1.48) .120(3.04) .117(2.96) .181(4.60) .173(4.40)
.016(0.41) .014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic Peak Repetitive Forward Off-State Blocking Current Peak Forward On-State Voltage Continuous DC Gate Trigger Current Continuous DC Gate Trigger Voltage DC Holding Current DC Latching Current
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol TA=25oC TA=125oC IDRM Min VTM IGT VGT IH IL dv/dt di/dt Tgd RθJC 25 30 100 Typ Max 5 100 1.4 2.2 200 0.8 5 6 0.5 V µ...