CONTROLLED RECTIFIERS. MXL1225 Datasheet

MXL1225 RECTIFIERS. Datasheet pdf. Equivalent

Part MXL1225
Description TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
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MXL1225
www.DataSheet4U.com
DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
MML1225
MXL1225
TECHNICAL SPECIFICATIONS OF SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
VOLTAGE RANGE - 300 to 380 Volts
CURRENT - 0.8 Ampere
Description
These Silicon Controlled Rectifiers are high
performance planar diffused PNPN devices.
They are intended for low cost, high volume
applications.
SOT-89
Pinning
1 = Gate
2 = Anode
3 = Cathode
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol
Peak Repetitive Off-State
Voltage(RGK=1KΩ)
MML1225
MXL1225
On-State RMS Current(TC=40oC)
VDRM
IT(RMS)
Peak Gate Current(10µs Max)
IGM
Gate Power Dissipation(20ms Max)
PG(AV)
Reverse Peak Gate Voltage
VGRM
Operating Junction Temperature
TJ
Storage Temperature
TSTG
Rating
300
380
0.8
1
0.1
8
-40 to +125
-40 to +125
Unit
V
A
A
W
V
oC
oC
.066(1.70)
.059(1.50)
.063(1.60)
.055(1.40)
.167(4.25)
.159(4.05)
.102(2.60)
.095(2.40)
123
.020(0.51)
.014(0.36)
.060(1.52)
.058(1.48)
.120(3.04)
.117(2.96)
.181(4.60)
.173(4.40)
.016(0.41)
.014(0.35)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Peak Repetitive Forward
Off-State Blocking Current
TA=25oC
TA=125oC
Symbol
IDRM
Min
-
-
Typ Max
-5
- 100
Peak Forward On-State Voltage
-
VTM
-
- 1.4
- 2.2
Continuous DC Gate Trigger Current
IGT - - 200
Continuous DC Gate Trigger Voltage
VGT -
- 0.8
DC Holding Current
IH - - 5
DC Latching Current
IL - - 6
Critical Rate-of-Rise of Off-State Voltage
dv/dt
25
-
-
Critical Rate-of-Rise of Off-State Current
di/dt
30
-
-
Gate Controlled Delay Time
Tgd -
- 0.5
Thermal Resistance, Junction to Case
RθJC
100
-
-
Unit
µA
V
µA
V
mA
mA
V/µS
A/µS
µsec
oC/W
Test Conditions
VAK=Rated VDRM or VRRM
RGK=1K
ITM=0.4A Peak, TJ=25oC
ITM=0.8A Peak, TJ=25oC
VAK=7V DC, RL=100
VAK=7V DC, RL=100
RGK=1K, Gate Open
RGK=1K, Gate Open
VD=0.67VDRM, RGK=1K, TJ=125oC
IG=10mA, diG/dt=0.1A/µS, TJ=125oC
IG=10mA, diG/dt=0.1A/µS
-







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