PLANAR TRANSISTOR. SC5094 Datasheet

SC5094 TRANSISTOR. Datasheet pdf. Equivalent

Part SC5094
Description TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Feature www.DataSheet4U.com DC COMPONENTS CO., LTD. R SC5094 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICA.
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SC5094
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DC COMPONENTS CO., LTD.
R DISCRETE SEMICONDUCTORS
SC5094
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for low noise amplifier at VHF, UHF and
CATV band.
SOT-23
Pinning
1 = Base
2 = Emitter
3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ
TSTG
Rating
18
10
2.5
20
150
+125
-50 to +125
Unit
V
V
V
mA
mW
oC
oC
.020(0.50)
.012(0.30)
3
.063(1.60) .108(0.65)
.055(1.40) .089(0.25)
12
.091(2.30)
.067(1.70)
.118(3.00)
.110(2.80)
.045(1.15)
.034(0.85)
.051(1.30)
.035(0.90)
.0043(0.11)
.0035(0.09)
.026(0.65)
.010(0.25)
.004
(0.10)
Max
.027(0.67)
.013(0.32)
Dimensions in inches and (millimeters)
Electrical Characteristics
(Ratings at 25oC ambient temperature unless otherwise specified)
Characteristic
Symbol Min
Collector Cutoff Current
ICBO
-
Emitter Cutoff Current
DC Current Gain(1)
IEBO
hFE
-
50
Transition Frequency
-
fT
-
Minimum Noise Figure
NFmin
-
-
Associated Gain
-
GA
-
Insertion Gain S21 2 in 50system
S21 2
-
-
(1)Pulse Test: Pulse Width 380µs, Duty Cycle 2%
Typ
-
-
80
7.6
9
1.4
1.6
12
13.5
12.8
13.5
Max
1
1
160
-
-
-
-
-
-
-
-
Unit
µA
µA
-
GHz
GHz
dB
dB
dB
dB
dB
dB
Test Conditions
VCB=3V
VEB=1V
IC=1mA, VCE=2V
IC=10mA, VCE=1V
IC=12mA, VCE=3V
IC=4.2mA, VCE=2V, f=0.9GHz
IC=4.5mA, VCE=5V, f=0.9GHz
IC=4.2mA, VCE=2V, f=0.9GHz
IC=4.5mA, VCE=5V, f=0.9GHz
IC=4.2mA, VCE=2V, f=0.9GHz
IC=4.5mA, VCE=5V, f=0.9GHz







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