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SS14-G Dataheets PDF



Part Number SS14-G
Manufacturers Comchip Technology
Logo Comchip Technology
Description (SS12-G - SS110-G) SMD Schottky Barrier Rectifier
Datasheet SS14-G DatasheetSS14-G Datasheet (PDF)

www.DataSheet4U.com SMD Schottky Barrier Rectifier SS12-G THRU SS110-G Reverse Voltage: 20~100 Volts Forward Current: 1.0 Amp Features Ideal for surface mount application Easy pick and place Plastic package has Underwriters Lab. Flammability classification 94V-0 Built-in strain relief Low forward voltage drop DO-214AC (SMA) 0.067(1.70 ) 0.051(1.29 ) 0.180(4.57 ) 0.160(4.06 ) 0.110(2.79) 0.086(2.18 ) Mechanical Data Case: JEDEC DO-214AC molded plastic Terminal: Solderable per MIL-STD-750 meth.

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www.DataSheet4U.com SMD Schottky Barrier Rectifier SS12-G THRU SS110-G Reverse Voltage: 20~100 Volts Forward Current: 1.0 Amp Features Ideal for surface mount application Easy pick and place Plastic package has Underwriters Lab. Flammability classification 94V-0 Built-in strain relief Low forward voltage drop DO-214AC (SMA) 0.067(1.70 ) 0.051(1.29 ) 0.180(4.57 ) 0.160(4.06 ) 0.110(2.79) 0.086(2.18 ) Mechanical Data Case: JEDEC DO-214AC molded plastic Terminal: Solderable per MIL-STD-750 method 2026 guaranteed Polarity: Color band denotes cathode end Mounting position: Any Weight: 0.064 gram 0.091(2.31 ) 0.067(1.70 ) 0.059(1.50 ) 0.035(0.89 ) 0.012(0.31 ) 0.006(0.15 ) 0.209(5.31 ) 0.185(4.70 ) 0.008(0.20) 0.004(0.10) Dimensions in inches and (millimeters) Maximum Rating and Electrical Characteristics Parameter Max. Repetitive Peak Reverse Voltage Max. DC Blocking Voltage Max. RMS Voltage Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load ( JEDEC method ) Max. Average Forward Current Max. Instantaneous Forward Current at 1.0 A Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25 C Ta=100 C Max. Thermal Resistance (Note 1) R R Operating Junction Temperature Storage Temperature Tj T STG JA JL Symbol V RRM V DC V RMS I FSM SS12-G 20 20 14 SS14-G 40 40 28 SS16-G 60 60 42 SS18-G 80 80 56 SS110-G 100 100 70 Unit V V V A 35 Io VF IR 10 0.50 1.0 0.70 0.85 A V . mA 0.5 5 88 C/W 20 -50 to +125 -65 to +150 C C Note 1: Thermal resistance from junction to ambient and junction to to lead P.C.B. Mounted on 0.2 x 0.2 copper pad areas ā€œ-Gā€ suffix designates RoHS compliant Version SMD Schottky Barrier Rectifier Rating and Characteristic Curves (SS12-G Thru SS110-G) Fig. 1 - Reverse Characteristics 100 100 Fig.2 - Forward Characteristics CDBA120-140 Reverse Current ( mA ) Forward Current ( A ) 10 10 CDBA160 CDBA180-1100 1 1 Tj=75 C 0.1 0.1 Tj=25 C 0.01 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0 20 40 60 80 100 120 140 160 180 200 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 1.7 Forward Voltage (V) 1.9 2.1 Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Junction Capacitance 350 300 Junction Capacitance (pF) =1MHz and applied 4VDC reverse voltage Fig. 4 - Current Derating Curve 250 200 150 100 50 0 0.01 0.1 1.0 10 100 Average Forward Current ( A ) 1.2 1.0 CD 0.8 0.6 0.4 0.2 0 20 40 60 80 BA Reverse Voltage (V) Ambient Temperature ( C) CD 100 16 BA 12 014 0 00 11 0 120 140 160 Fig. 5 - Non repetitive forward surge current Peak surge Forward Current ( A ) 50 40 30 8.3mS Single Half Sine Wave JEDEC methode Tj=25 C 20 10 0 1 5 10 50 1 00 Number of Cycles at 60Hz .


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