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BF1210
Dual N-channel dual gate MOSFET
Rev. 01 — 25 October 2006 Product data sheet
1. Product pro...
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BF1210
Dual N-channel dual gate MOSFET
Rev. 01 — 25 October 2006 Product data sheet
1. Product profile
1.1 General description
The BF1210 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The
transistor has a SOT363 micro-miniature plastic package.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features
I Two low noise gain controlled amplifiers in a single package; both with a partly integrated bias I Superior cross modulation performance during AGC I High forward transfer admittance I High forward transfer admittance to input capacitance ratio
1.3 Applications
I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage N digital and analog television tuners N professional communication equipment
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NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
1.4 Quick reference data
Table 1. Quick reference data Per MOSFET unless otherwise specified. Symbol Parameter VDS ID Ptot |yfs| Ciss(G1) drain-source voltage drain current total power dissipation forward transfer admittance input capacitance at gate1 DC Tsp ≤ 107 °C amplifier A; ID = 19 mA a...