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BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
Rev. 08 — 26 October 2005 Product data sheet
1. Product profile
1.1 General description
200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.
Table 1: Typical performance RF performance at Th = 25 °C in a common source class-AB test circuit; IDq = 150 mA; typical values. Mode of operation Pulsed class-AB: 1030 MHz to 1090 MHz Conditions tp = 50 µs; δ = 2 % tp = 128 µs; δ = 2 % tp = 340 µs; δ = 1 % CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. VDS (V) 36 36 36 PL (W) 200 250 250 Gp (dB) 15 14 14 ηD (%) 50 50 50 tr (ns) 35 35 35 tf (ns) 6 6 6
1.2 Features
s Typical pulsed class-AB performance at a frequencies from 1030 MHz to 1090 MHz, a supply voltage of 36 V and an IDq of 150 mA: x Load power ≥ 200 W x Gain ≥ 13 dB x Efficiency ≥ 45 % x Rise time ≤ 50 ns x Fall time ≤ 50 ns s High power gain s Easy power control s Excellent ruggedness s Source on mounting flange eliminates DC isolators, reducing common mode inductance
1.3 Applications
s Avionics transmitter applications in the 1030 MHz to 1090 MHz frequency range.
www.DataSheet4U.com
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
2. Pinning information
Table 2: Pin 1 2 3 Pinning Description drain gate source
[1]
Simplified outline
Symbol
BLA1011-200 (SOT502A)
1 3 2 2 3
sym039
1
BLA1011S-200 (SOT502B) 1 2 3 drain gate source
[1]
1 3 2 2
1
3
sym039
[1]
Connected to flange
3. Ordering information
Table 3: Ordering information Package Name BLA1011-200 BLA1011S-200 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads earless flanged LDMOST ceramic package; 2 leads Version SOT502A SOT502B Type number
4. Limiting values
Table 4: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VGS Ptot Tstg Tj Parameter drain-source voltage gate-source voltage total power dissipation storage temperature junction temperature Th ≤ 25 °C; tp = 50 µs; δ = 2 % Conditions Min −65 Max 75 ±22 700 +150 200 Unit V V W °C °C
9397 750 14634
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 08 — 26 October 2005
2 of 13
www.DataSheet4U.com
Philips Semiconductors
BLA1011-200; BLA1011S-200
Avionics LDMOS transistor
5. Thermal characteristics
Table 5: Symbol Zth(j-h)
[1]
Thermal characteristics Parameter Conditions
[1]
Typ 0.15
Unit K/W
thermal impedance from junction to heatsink Th = 25 °C
Thermal resistance is determined under RF operating conditions; tp = 50 µs, δ = 10 %.
6. Characteristics
Table 6: Characteristics Tj = 25 °C unless otherwise specified Symbol Parameter VGS(th) IDSS IDSX IGSS gfs RDS(on) gate-source threshold voltage drain leakage current drain cut-off current gate leakage current transfer conductance Conditions VDS = 10 V; ID = 300 mA VGS = 0 V; VDS = 36 V .