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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-180; BLF0810S-180 Base station LDMOS t...
www.DataSheet4U.com
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D379
M3D461
BLF0810-180; BLF0810S-180 Base station LDMOS
transistors
Product specification Supersedes data of 2003 May 09 2003 Jun 12
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Philips Semiconductors Product specification
Base station LDMOS
transistors
FEATURES Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 1130 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz: – Output power = 30 W – Gain = 16 dB – Efficiency = 27% – ACPR = −46 dBc at 750 kHz and BW = 30 kHz Easy power control Excellent ruggedness High power gain Excellent thermal stability Designed for broadband operation (800 to 1000 MHz) Internally matched for ease of use. PINNING - SOT502A PIN 1 2 3 drain gate source; connected to flange DESCRIPTION
BLF0810-180; BLF0810S-180
APPLICATIONS Common source class-AB operation applications in the 860 to 960 MHz frequency range CDMA and multicarrier applications. DESCRIPTION 180 W LDMOS power
transistor for base station applications at frequencies from 800 to 1000 MHz.
PINNING - SOT502B PIN 1 2 3 drain gate source; connected to flange DESCRIPTION
handbook, halfpage
1
1 3
2 Top view
3
MBK394
2 Top view
MBL105
Fig.1 Simplified outline SOT502A (BLF0810-180).
Fig.2 Simplified outline SOT502B (BLF0810S-180).
QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Class-AB (2-tone) CDMA (IS95) f (MHz)...