BLF0810S-90

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 www.DataSheet4U.com Philips Semiconductors Product specification Base station LDMOS transistors FEATURES Typical CDMA IS95 performance at standard settings with a supply voltage of 27 V and IDQ of 560 mA. Adjacent channel bandwidth is 30 kHz, adjacent channel at ± 750 kHz: – Output power = 15 W (AV) – Gain = 16 dB – Efficiency = 27% – ACPR = −46 dBc at 750 kHz and BW = 30 kHz 70 W CW performance Easy power control Excellent ruggedness High power gain Excellent thermal stability Designed for broadband operation (800 to 1000 MHz) Internally matched for ease of use. PINNING - SOT502A PIN 1 2 3 drain gate source; connected to flange DESCRIPTION BLF0810-90; BLF0810S-90 APPLICATIONS RF power amplifier for GSM, EDGE and CDMA base stations and multicarrier operations in the 800 to 1000 MHz frequency range. DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 800 to 1000 MHz. PINNING - SOT502B PIN 1 2 3 drain gate source; connected to flange DESCRIPTION handbook, halfpage 1 1 3 2 Top view 3 MBK394 2 Top view MBL105 Fig.1 Simplified outline SOT502A (BLF0810-90). Fig.2 Simplified outline SOT502B (BLF0810S-90) QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a common source test circuit. MODE OF OPERATION Class-AB (2-tone)...