IRGS6B60K

www.DataSheet4U.com PD - 94575A INSULATED GATE BIPOLAR TRANSISTOR Features Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. C IRGB6B60K IRGS6B60K IRGSL6B60K VCES = 600V IC = 7.0A, TC=100°C G E tsc > 10µs, TJ=150°C Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. n-channel VCE(on) typ. = 1.8V TO-220AB IRGB6B60K D2Pak IRGS6B60K TO-262 IRGSL6B60K Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current  Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Max. 600 13 7.0 26 26 ± 20 90 36 -55 to +150 300 (0.063 in. (1.6mm) from case) Units V A V W °C Thermal Resistance Parameter RθJC RθCS RθJA RθJA Wt Junction-to-Case - IGBT Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount‚ Junction-to-Ambient (PCB Mount, steady state)ƒ Weight Min. ––– ––– ––– ––– ––– Typ. ––– 0.50 ––– ––– 1.44 Max. 1.4 ––– 62 40 ––– Units °C/W g www.irf.com 1 8/18/04 www.DataSheet4U.com IRG/B/S/SL6B60K Electrical Characteristics @ TJ = 25°C (unless otherwise sp...