IRGIB7B60KDPBF

www.DataSheet4U.com PD - 95195 IRGIB7B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Low VCE (on) Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C. Lead-Free G E C VCES = 600V IC = 8.0A, TC=100°C tsc > 10µs, TJ=150°C n-ch an nel VCE(on) typ. = 1.8V Benefits Benchmark Efficiency for Motor Control. Rugged Transient Performance. Low EMI. Excellent Current Sharing in Parallel Operation. TO-220AB FullPak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VISOL VGE PD @ TC = 25°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) Clamped Inductive Load current Q Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolation Voltage, Terminal to Case, t=1 min. Gate-to-Emitter Voltage Maximum Power Dissipation Max. 600 12 8.0 24 24 9.0 6.0 18 2500 ±20 39 20 -55 to +175 Units V A V W PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ TSTG Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw °C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal / Mechanical Characteristics Parameter RθJC RθJC RθCS RθJA Wt Junction-to-Case- IGBT Junction-to-Case- D...