SFF110S.22

www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com SFF110S.22 3.5 A /100 Volts / 0.6 Ω N-Channel MOSFET Transistor Features: Rugged Construction with Polysilcon Gate Small Footprint Hermetic Surface Mount Device with Excellent Thermal Properties Replacement/Enhancement for 2N6782 TX, TXV, S-Level Screening Available Very Fast Switching Characteristics DESIGNER’S DATA SHEET SMD.22 Maximum Ratings Drain – Source Voltage Drain – Gate Voltage Gate – Source Voltage Continuous Drain Current Power Dissipation @ TC = 25ºC Power Dissipation @ TA = 25ºC Operating & Storage Temperature Maximum Thermal Resistance Junction to Case and to Ambient Note1: Derated 60.6 mW/°C above TC= 25°C Note2: Derated 6.4 mW/°C above TA= 25°C Symbol VDS VDG VGS @ TC = 25ºC @ TC = 100ºC Note 1 Note 2 Value 100 100 +/-20 3.5 2.25 16.5 0.8 -55 to +150 7.5 (typ 5) 156.5 Units Volts Volts Volts Amps W ºC ºC/W ID1 ID2 PD Top & Tstg RθJC RθJA PIN 1= COLLECTOR; PIN 2= EMITTER; PIN 3= BASE .220±.007 .065±.010 3 .134 .030 1 2 .140 .150 ±.007 .052 .070 .090 .005 TYP NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0015A DOC www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, CA 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 ss...