SFF24N50M

www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com SFF24N50M SFF24N50Z DESIGNER’S DATA SHEET Part Number / Ordering Information 1/ SFF24N50 __ __ __ ¦ ¦ + Screening 2/ __ = Not Screen ¦ ¦ TX = TX Level ¦ ¦ TXV = TXV Level ¦ ¦ S = S Level ¦ ¦ ¦ + Lead Option 3/ __ = Straight Leads ¦ DB = Down Bend ¦ UB = Up Bend ¦ + Package 3/ M = TO-254 24 AMP / 500 Volts 0.2 Ω N-Channel MOSFET Features: Rugged Construction with Polysilicon Gate Cell Low RDS(ON) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dV/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Ceramic Seals for Improved Hermeticity Hermetically Sealed Surface Mount Power Package TX, TXV, Space Level Screening Available Replacement for IXTH24N50 Types Z = TO-254Z Maximum Ratings Drain – Source Voltage Gate – Source Voltage Continuous Collector Current Avalanche Current Avalanche Energy Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance Junction to Case TO-254 (M) TO-254Z (Z) Symbol VDS VGS ID Repetitive Repetitive Single Pulse TC = 25ºC TC = 55ºC IAR EAR EAS PD Top & Tstg RθJC Value 500 ±20 24 21 1 690 150 114 -55 to +150 0.83 Units Volts Volts Amps Amps mJ W ºC ºC/W NOTE: All specifications are subject to change without n...