SFF35N20M

www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com SFF35N20M SFF35N20Z 55 AMP (note 1) /200 Volts 35 mO N-Channel Trench Gate MOSFET Features: TRENCH GATE technology Lowest ON-resistance in the industry UIS rated Hermetically Sealed, Isolated Power Package Low Total Gate Charge Fast Switching TX, TXV, S-Level screening available Improved (RDS(ON) QG) figure of merit Enhanced replacement for IRHM250 types DESIGNER’S DATA SHEET TO-254 and TO-254Z note 1: Drain Current is package limited Maximum Ratings Drain - Source Voltage Gate – Source Voltage Max. Continuous Drain Current (junction temperature limited) Max. Continuous Drain Current (package limited) Max. Avalanche current Repetitive Avalanche Energy Total Power Dissipation Operating & Storage Temperature Maximum Thermal Resistance (Junction to Case) TO-254Z(Z) TO-254 (M) Symbol VDSS VGS @ TC = 25ºC @ TC = 125ºC @ TC = 25ºC @ L= 0.1 mH @ L= 0.1 mH @ TC = 25ºC ID1 ID2 ID3 IAR EAR PD TOP & TSTG R0JC Value 200 ±20 85 12 55 35 60 210 -55 to +175 0.7 (typ 0.55) Units V V A A A mJ W ºC ºC/W PIN 3 PIN 2 PIN 3 PIN 2 PIN 1 PIN 1 NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release. DATA SHEET #: FT0018A DOC www.DataSheet4U.com Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 9...