P-Channel Power MOSFET
www.DataSheet4U.com
PRELIMINARY
SFF9130-28D
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638 Pho...
Description
www.DataSheet4U.com
PRELIMINARY
SFF9130-28D
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773
DESIGNER'S DATA SHEET FEATURES: Rugged construction with poly silicon gate Low RDS (on) and high transconductance Excellent high temperature stability Very fast switching speed Fast recovery and superior dv/dt performance Increased reverse energy capability Low input transfer capacitance for easy paralleling Hermetically sealed surface mount package TX, TXV and Space Level screening available Replaces: 2x IRF9130 Types MAXIMUM RATINGS CHARACTERISTIC
Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case (Both) Total Device Dissipation TC = 25oC TC = 55oC TC = 25oC TC = 100oC
-11 AMP -100 VOLTS 0.30S DUAL UNCOMMITED P-CHANNEL POWER MOSFET
28 PIN CLCC
SYMBOL VDS VGS ID Top & Tstg R 2 JC PD EAS EAR
VALUE -100 ±20 -11 -7 -55 to +150 3.5 36 37 84 7.5
UNIT Volts Volts Amps
o
C
o
C/W
Watts mJ mJ
Single Pulse Avalange Energy Repetitive Avalange Energy PACKAGE OUTLINE: 28 PIN CLCC
PIN OUT: SOURCE (1): 16 - 21 DRAIN (1): 24 - 28 GATE (1): 22 SOURCE (2): 9 - 14 DRAIN (2): 2 - 6 GATE (2): 8 NOTE: All drain/source pins must be connected on the PC board in order to maximize current carrying capability and to minimize RDS (on)
NOTE: All specifications are subject to change without notification. SCD's for these device...
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