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Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
SFF9140J
-18 AMPS -100 VOLTS 0.20 Ω P-CHANNEL POWER MOSFET
TO-257
Designer’s Data Sheet
FEATURES:
• • • • • • • • • Rugged Construction with Poly Silicon Gate Low RDS(on) and High Transconductance Excellent High Temperature Stability Very Fast Switching Speed Fast Recovery and Superior dv/dt Performance Increased Reverse Energy Capability Low Input and Transfer Capacitance for Easy Paralleling Hermetically Sealed Replaces: IRF9140 Types TX, TXV, and Space Level Screening Available. Consult Factory.
•
MAXIMUM RATINGS
Drain to Source Voltage Gate to Source Voltage Continuous Drain Current Operating and Storage Temperature Thermal Resistance, Junction to Case Total Device Dissipation Single Pulse Avalanche Energy Repetitive Avalanche Energy
PACKAGE OUTLINE: TO-257 (J) PINOUT: PIN 1: DRAIN PIN 2: SOURCE PIN 3: GATE
Symbol
VDS VGS TC = 25 C TC = 100oC
o
Value
-100 ±20 -18 -11 -55 to +150 2.0 63 48 500 12.5
Units
Volts Volts Amps
o o
ID TOP & Tstg RθJC
C
C/W
TC = 25 C TC = 55oC
o
PD EAS EAR
Watts mJ mJ
SUFFIX JDB
SUFFIX JUB
NOTE: All specifications are subject to change without notification. SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FP0015G
DOC
www.DataSheet4U.com
SFF9140J
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773
[email protected] * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS
Drain to Source Breakdown Voltage (VGS = 0 V, ID = 1 mA) Temperature Coefficient of Breakdown Voltage Drain to Source ON State Resistance (VGS = -10 V) Gate Threshold Voltage (VDS = VGS, ID = 250µA) Forward Transconductance (VDS > 10V, IDS = 11A) Zero Gate Voltage Drain Current (VDS = 80% rated VDS, VGS = 0 V) o (VDS = 80% rated VDS, VGS = 0 V, TA = 125 C) Gate to Source Leakage Forward Gate to Source Leakage Reverse Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn ON Delay Time Rise Time Turn OFF Delay Time Fall TIme Diode Forward Voltage (IS = rated ID, VGS = 0 V, TJ = 25°C) Diode Reverse Recovery Time Reverse Recovery Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance TJ = 25 C IF = rated ID di/dt = 100 A/µsec VGS = 0 Volts VDS = -25 Volts f = 1 MHz
o
Symbol
∆BVDSS ∆BVDSS TJ ID = 11A ID = 18A RDS(on) VGS(th) gfs IDSS IgSS Qg Qgs Qgd td(on)r tr td(off) tf VSD trr QRR Ciss Coss Crss
Min
-100 –– –– –– -2.0 6.1 –– –– –– –– 31 –– 7 –– –– –– –– –– –– –– –– –– ––
Typ
–– 0.087 0.15 –– –– 8.0 –– –– –– –– 50 3 25 15 8 35 20 –– 170 –– 1400 600 200
Max
–– –– 0.20 0.23 -4.0 –– 25 250 -100 100 70 15 45 35 85 85 65 -4.2 280 3.6 1650 740 260
Unit
Volts Volts Ω Volts S mho µA nA nC
At rated VGS VGS = -10 Volts 50% rated VDS ID = -18 A) (VDD = 50% of rated VDS rated ID RG = 9.1 Ω)
ns
Volts ns µC ns
.