SHA489

www.DataSheet4U.com SHA489 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: (562) 404-7855 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com Designer’s Data Sheet FEATURES: Power Dissipation 1 kW @ 25oC Case Extremely Large SOA Ultra Fast Switching, ts = 100 ns typical (Outperforms IGBT) OFHC Copper Package Ideal for Motor Control/Power Systems Extremely Low RθJC: 0.1oC/W Can Be Driven From Low Level Logic Higher Current and Voltages Available. Consult Factory Alternate Packages Available. Consult Factory. TX, TX-V, and S-Level Screening Available. Consult Factory. IGBT REPLACEMENT ULTRA FAST SWITCHING DEVICE 200 Amps 250 Volts 1000 Watts MAXIMUM RATINGS Output Voltage (Collector – Emitter) Out/In Isolation (Collector – Gate) Input Voltage (Gate – Emitter) Current Sink Capabilities (peak) Input Current (transistor switched off)* Total Device Power Dissipation @ TC = 25ºC Derate above 75ºC Storage Temperature Symbol V3-1 V3-2 V2-1 I3 I2 PD Tstg Value 250 250 ±20 200 -5 1000 8 -55 to +150oC Units V V V A A W W/ºC ºC THERMAL CHARACTERISTICS Thermal Resistance (Junction – Case) Power Section Symbol RθJC Value 0.1 Units ºC/W ELECTRICAL CHARACTERISTICS Output Breakdown (Collector – Emitter) Out/In Isolation (Collector – Gate) Input Breakdown Voltage Output Leakage Current (I3 = 10 mA, V2-1 = -4 V) (I3 = 300 µA, I1 = 0 V) (I1 = -100 µA, I3 = 0 V) (I1 = 100 µA, I3 = 0 V) (V2-1 = -4 V, V3-1 ≤ 250 V) Symbol BV3-...