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GMR10H250C

Gamma Microelectronics

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

www.DataSheet4U.com MICROELECTRONICS A A Power Discrete GMR10H250C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION...


Gamma Microelectronics

GMR10H250C

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Description
www.DataSheet4U.com MICROELECTRONICS A A Power Discrete GMR10H250C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER DESCRIPTION Dual center tap schottky rectifier designed for high frequency Switched Mode Supplies. Power Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM VF @5 Apk, TC = 125°C (per leg) Values 2X5 250 0.90 -45 ~ +150 Unit A V V °C FEATURES High junction temperature capability Good trade off between leakage current and forward voltage drop Low leakage current TJ range TO-220AB TO-263-2(D PAK) 2 Base Common Cathode 2 1 1 2 3 2 3 Anode Common Cathode 2 Anode 1 3 1 2 3 Anode Common Cathode 2 Anode 1 3 www.gammamicro.com GMR10H250C V0.1 1 TO-220FPAB MICROELECTRONICS A A Power Discrete GMR10H250C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MARKING INFORMATION TO - 220AB TO-263-2 (D PAK) 2 10H200C AYW W 10H200C AYW W A : Assembly Location Y : Year WW : Weekly ORDERING INFORMATION Ordering Number Package Shipping GMR10H250CTA3T GMR10H250CTA3R GMR10H250CTB3T GMR10H250CTBF3T TO - 263-2 TO - 263-2 TO - 220AB TO - 220FPAB 50 Units/ Tube 800 Units/ Tape & Reel 50 Units/ Tube 50 Units/ Tube * For detail Ordering Number identification, please see last page. GMR10H250C ABSOLUTE RATINGS (TC = 25°C) Symbol VRRM IF(AV) Parameter Repetitive peak reverse voltage Maximum average forward rectified current per diode per device Value 250 5 10 160 -45 to + 150 Unit V A IFSM Tj, Tstg Peak forward surge current 8.3ms single ha...




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