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RF3159

RF Micro Devices

QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE

www.DataSheet4U.com RF3159 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free P...


RF Micro Devices

RF3159

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Description
www.DataSheet4U.com RF3159 QUAD-BAND GSM/EDGE/GSM850/EGSM900 /DCS/PCS/POWER AMPLIFIER MODULE RoHS Compliant & Pb-Free Product Package Style: Module (6mmx6mm) HB RFIN 1 18 HB RFOUT BAND SEL 2 Features „ „ „ „ VBIAS „ „ „ „ „ High Gain for use in Systems with Low RF Driver Power Linear EDGE and GSM Operation PowerStar® GSM/GPRS Power Control Digital Band Select Enables GSM850, EGSM900 or DCS, PCS Amplifier Lineup Single Supply Voltage; Requires no External Reference Voltage Automatic VBATT Tracking Circuit avoids Switching Transients at Low Supply Voltage Low Power Mode for Reduced EDGE Current Digital Bias Control for Simple Implementation of Low Power Mode Compact 6mmx6mm Package Quad-Band GSM/EDGE Handsets GSM/EDGE Transmitter Lineups Portable Battery-Powered Equipment GSM850/EGSM900/DCS/ PCS Products GPRS Class 12 Compatible Products Mobile EDGE/GPRS Data Products TX EN 3 Integrated Power Control VBATT 4 VMODE 5 VRAMP 6 LB RFIN 7 8 12 LB RFOUT Functional Block Diagram Product Description The RF3159 is a high power, dual-mode amplifier module with integrated power control. The input and output terminals are internally matched to 50 Ω. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process, which is designed to operate either in saturated mode for GMSK signaling or linear mode for 8PSK signaling. The module is designed to be the final amplification stage in a dual-mode GSM/EDGE mobile ...




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