LN151F

Infrared Light Emitting Diodes LN151F, LN151L GaAs Infrared Light Emitting Diodes For optical control systems Features High-power output, high-efficiency : PO = 7.5 mW (typ.) Fast response and high-speed modulation capability : tr, tf = 1 µs (typ.) LN151F ø4.6±0.15 Unit : mm Glass window 12.7 min. 4.5±0.2 2-ø0.45±0.05 2.54±0.25 2 0. 0± 1. 1. 0± 0. 15 3˚ 45± Infrared light emission close to monochromatic light : λP = 950 nm (typ.) Narrow directivity, suitable for effective use of radiant power (LN151L) Wide directivity, matched for external optical systems (LN151F) TO-18 standard type package 2 1 ø5.75 max. 1: Anode 2: Cathode LN151L Absolute Maximum Ratings (Ta = 25˚C) Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Unit : mm ø4.6±0.15 Glass lens Symbol PD IF IFP * Ratings 160 100 2 3 –25 to +100 –30 to+100 Unit mW mA A V ˚C ˚C 12.7 min. 6.3±0.3 2-ø0.45 ± 0.05 2.54±0.25 1. VR Topr Tstg 0 0± .2 1. 0± 0 .1 f = 100 Hz, Duty cycle = 0.1 % 5 3˚ 45± 2 1 ø5.75 max. 1: Anode 2: Cathode Electro-Optical Characteristics (Ta = 25˚C) Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Rise time Fall time Half-power angle LN151F LN151L Symbol PO λP ∆λ VF IR Ct tr tf θ Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IFP = 100mA The angle in which ...