GaAlAs Infrared Light Emitting Diode
Infrared Light Emitting Diodes
LN172
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Featur...
Description
Infrared Light Emitting Diodes
LN172
GaAlAs Infrared Light Emitting Diode
Unit : mm
For optical control systems Features
High-power output, high-efficiency : PO = 12 mW (typ.) Light emitting spectrum suited for silicon photodetectors : λP = 900 nm (typ.) Good optical power output linearity with respect to input current Long lifetime, high reliability
1. 0± 0. 15
2.4±0.3 12.7 min. 1.2±0.1 0.25±0.1
ø4.2 +0.2 –0.1
2-ø0.45±0.05
Wide directivity : θ = 100 deg. (typ.)
15 0. 0± 1.
45± 3˚
ø5.35 +0.2 –0.1
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature
*
2
1
Symbol PD IF IFP
*
Ratings 170 100 2 3 –25 to +85 –30 to +100
Unit mW mA A V ˚C ˚C
2.54±0.25
1: Cathode 2: Anode
VR Topr Tstg
f = 100 Hz, Duty cycle = 0.1 %
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Radiant power Peak emission wavelength Spectral half band width Forward voltage (DC) Reverse current (DC) Capacitance between pins Response time Half-power angle Symbol PO λP ∆λ VF IR Ct tr , t f θ Conditions IF = 100mA IF = 100mA IF = 100mA IF = 100mA VR = 3V VR = 0V, f = 1MHz IF = 100mA
The angle in which radiant intencity is 50%
min 7
typ 12 900 70 1.4 50 700 100
max
Unit mW nm nm
1.7 10
V µA pF ns deg.
1
Infrared Light Emitting Diodes
LN172
IF — Ta
120 10 2
IFP — Duty cycle
tw = 10µs Ta = 25˚C 10
IFP — VF
tw = 10µs f = 100Hz Ta = 25˚C
IF (mA)
IFP (A)
10
Allo...
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