20N40CL Datasheet | MGP20N40CL





20N40CL PDF File (Datasheet) Download

Part Number 20N40CL
Description MGP20N40CL
Manufacture Motorola
Total Page 6 Pages
PDF Download Download 20N40CL PDF File

Features: www.DataSheet4U.com SEMICONDUCTOR TECHNI CAL DATA MOTOROLA Order this document by MGP20N40CL/D Advanced Information SMARTDISCRETES IGBT ™ MGP20N40CL I nternally Clamped, N-Channel This Logic Level Insulated Gate Bipolar Transisto r (IGBT) features Gate–Emitter ESD pr otection, Gate–Collector overvoltage protection from SMARTDISCRETES™ monol ithic circuitry for usage as an Ignitio n Coil Driver. • Temperature Compensa ted Gate–Drain Clamp Limits Stress Ap plied to Load • Integrated ESD Diode Protection • Low Threshold Voltage to Interface Power Loads to Logic or Micr oprocessors • Low Saturation Voltage • High Pulsed Current Capability 20 A MPERES VOLTAGE CLAMPED N–CHANNEL IGBT Vce(on) = 1.8 VOLTS 400 VOLTS (CLAMPED ) ® C G G Rge C E E CASE 221A–06 , Style 9 TO–220AB MAXIMUM RATINGS ( TJ = 25°C unless otherwise noted) Rati ng Collector–Emitter Voltage Collecto r–Gate Voltage Gate–Emitter Voltage Collector Current — Continuous @ TC = 25°C Reversed Collector Current – pulse width Symbol VCES .

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MOTOROLA
www.DSatEaSMhIeCetO4UN.cDoUmCTOR TECHNICAL DATA
Advanced Information
SMARTDISCRETES
Internally Clamped, N-Channel
IGBT
This Logic Level Insulated Gate Bipolar Transistor (IGBT)
features Gate–Emitter ESD protection, Gate–Collector overvoltage
protection from SMARTDISCRETESmonolithic circuitry for
usage as an Ignition Coil Driver.
Temperature Compensated Gate–Drain Clamp Limits Stress
Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage to Interface Power Loads to Logic or
Microprocessors
Low Saturation Voltage
High Pulsed Current Capability
Order this document
by MGP20N40CL/D
MGP20N40CL
20 AMPERES
VOLTAGE CLAMPED
N–CHANNEL IGBT
Vce(on) = 1.8 VOLTS
400 VOLTS (CLAMPED)
®
C
G
G
Rge
C
E
CASE 221A–06, Style 9
TO–220AB
E
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Collector–Emitter Voltage
Collector–Gate Voltage
Gate–Emitter Voltage
Collector Current — Continuous @ TC = 25°C
tReversed Collector Current – pulse width 100 m s
Total Power Dissipation @ TC = 25°C (TO–220)
Electrostatic Voltage — Gate–Emitter
VCES
VCGR
VGE
IC
ICR
PD
ESD
CLAMPED
CLAMPED
CLAMPED
20
12
150
3.5
Operating and Storage Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance — Junction to Case – (TO–220)
— Junction to Ambient
Maximum Lead Temperature for Soldering Purposes, 1/8from case for 5 seconds
Mounting Torque, 6–32 or M3 screw
TJ, Tstg
– 55 to 175
Rq JC
Rq JA
1.0
62.5
TL 275
10 lbfin (1.13 Nm)
UNCLAMPED INDUCTIVE SWITCHING CHARACTERISTICS
Single Pulse Collector–Emitter Avalanche Energy
@ Starting TJ = 25°C
@ Starting TJ = 150°C
EAS
550
150
SMARTDISCRETES and TMOS are trademarks of Motorola, Inc.
This document contains information on a new product. Specifications and information herein are subject to change without notice.
Unit
Vdc
Vdc
Vdc
Adc
Apk
Watts
kV
°C
°C/W
°C
mJ
REV 1
© MMoototororloa,laIncT.M19O97S Power MOSFET Transistor Device Data
1

                 






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