IRF1405ZL

www.DataSheet4U.com PD - 94645A AUTOMOTIVE MOSFET IRF1405Z IRF1405ZS IRF1405ZL HEXFET® Power MOSFET D Features l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax VDSS = 55V G S RDS(on) = 4.9mΩ ID = 75A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. TO-220AB IRF1405Z D2Pak IRF1405ZS TO-262 IRF1405ZL Absolute Maximum Ratings Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) ID @ TC = 100°C Continuous Drain Current, VGS @ 10V ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Package Limited) IDM Pulsed Drain Current PD @TC = 25°C Power Dissipation Max. 150 110 75 600 230 1.5 ± 20 Units A ™ W W/°C V mJ A mJ Linear Derating Factor VGS Gate-to-Source Voltage EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Tested ) Single Pulse Avalanche Energy Tested Value d IAR EAR TJ TSTG Avalanche Current Ù h 270 420 See Fig.12a, 12b, 15, 16 -55 to + 175 Repetitive Avalanche Energy Operating Juncti...