Power MOSFET. IRF6668PBF Datasheet

IRF6668PBF MOSFET. Datasheet pdf. Equivalent


International Rectifier IRF6668PBF
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l RoHs Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for High Performance Isolated Converter
Primary Switch Socket
l Optimized for Synchronous Rectification
l Low Conduction Losses
l High Cdv/dt Immunity
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
PD - 97232A
IRF6668PbF
IRF6668TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
80V max ±20V max
12m@ 10V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
22nC 7.8nC 1.6nC 40nC 12nC 4.0V
MZ
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MZ
Description
The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6668PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V
ETSI input voltage range systems. The IRF6668PbF is also ideal for secondary side synchronous rectification in regulated
isolated DC-DC topologies. The reduced total losses in the device coupled with the high level of thermal performance enables
high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
EAS
IAR
Drain-to-Source Voltage
Gate-to-Source Voltage
fContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
80 V
±20
55
44 A
170
24 mJ
23 A
60 12.0
50
ID = 12A
10.0 ID= 12A
VDS= 64V
40 8.0 VDS= 40V
30
TJ = 125°C
20
6.0
4.0
10
0
4
TJ = 25°C
6 8 10 12 14 16
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
2.0
0.0
0 2 4 6 8 10 12 14 16 18 20 22 24
QG, Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.088mH, RG = 25, IAS = 23A.
1
08/28/06


IRF6668PBF Datasheet
Recommendation IRF6668PBF Datasheet
Part IRF6668PBF
Description DirectFET Power MOSFET
Feature IRF6668PBF; www.DataSheet4U.com PD - 97232A IRF6668PbF IRF6668TRPbF DirectFET™ Power MOSFET ‚ Typical values (.
Manufacture International Rectifier
Datasheet
Download IRF6668PBF Datasheet




International Rectifier IRF6668PBF
IRF6668PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
Drain-to-Source Breakdown Voltage
80
∆ΒVDSS/TJ
RDS(on)
VGS(th)
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
–––
3.0
VGS(th)/TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
22
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG(Internal)
Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
–––
(Body Diode) g
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
0.097
12
4.0
-11
–––
–––
–––
–––
–––
22
4.8
1.6
7.8
7.8
9.4
12
1.0
19
13
7.1
23
1320
310
76
Typ.
–––
–––
–––
34
40
Max. Units
Conditions
––– V VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
15 mVGS = 10V, ID = 12A i
4.9 V VDS = VGS, ID = 100µA
––– mV/°C
20
250
100
-100
–––
µA VDS = 80V, VGS = 0V
VDS = 64V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 10V, ID = 12A
31
––– VDS = 40V
––– nC VGS = 10V
12 ID = 12A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
–––
––– VDD = 40V, VGS = 10V i
––– ID = 12A
––– ns RG = 6.2
––– See Fig. 16 & 17
––– VGS = 0V
––– pF VDS = 25V
––– ƒ = 1.0MHz
Max. Units
Conditions
81 MOSFET symbol
A showing the
170 integral reverse
p-n junction diode.
1.3 V TJ = 25°C, IS = 12A, VGS = 0V i
51 ns TJ = 25°C, IF = 12A
60 nC di/dt = 100A/µs i See Fig. 18
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width 400µs; duty cycle 2%.
2
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International Rectifier IRF6668PBF
Absolute Maximum Ratings
PD @TA = 25°C
PD @TA = 70°C
PD @TC = 25°C
TP
TJ
TSTG
ePower Dissipation
ePower Dissipation
fPower Dissipation
Parameter
Peak Soldering Temperature
Operating Junction and
Storage Temperature Range
Thermal Resistance
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Parameter
emJunction-to-Ambient
kmJunction-to-Ambient
lmJunction-to-Ambient
fmJunction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
10
IRF6668PbF
Max.
2.8
1.8
89
270
-40 to + 150
Units
W
°C
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.4
–––
Units
°C/W
W/°C
1
D = 0.50
0.20
0.10
0.1 0.05
0.02
0.01
0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R 1R 1
C
i=
C
iτ=iRi /iR i
R 2R 2
τ2 τ2
R3R3 Ri (°C/W) τi (sec)
τCτC 0.3173 0.000048
τ3τ3 0.5283 0.000336
0.5536 0.001469
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
‰ Used double sided cooling , mounting pad.
Š Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
‹ Rθ is measured at TJ of approximately 90°C.
ƒ Surface mounted on 1 in. square Cu
(still air).
www.irf.com
‰ Mounted to a PCB with
small clip heatsink (still air)
Š Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3







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