Power MOSFET. IRF7319PBF Datasheet

IRF7319PBF MOSFET. Datasheet pdf. Equivalent


International Rectifier IRF7319PBF
www.DataSheet4U.com
PD - 95267
IRF7319PbF
HEXFET® Power MOSFET
l Generation V Technology
l Ultra Low On-Resistance
l Dual N and P Channel MOSFET
l Surface Mount
l Fully Avalanche Rated
l Lead-Free
Description
N-CHANNEL MOSFET
S1 1
8 D1
N-Ch P-Ch
G1 2
S2 3
7 D1
VDSS 30V -30V
6 D2
G2 4
5 D2
P-CHANNEL MOSFET
RDS(on) 0.0290.058
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Maximum
N-Channel P-Channel
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current…
Pulsed Drain Current
TA = 25°C
TA = 70°C
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation …
Single Pulse Avalanche Energy
TA = 25°C
TA = 70°C
VDS
VGS
ID
IDM
IS
PD
EAS
30 -30
± 20
6.5 -4.9
5.2 -3.9
30 -30
2.5 -2.5
2.0
1.3
82 140
Avalanche Current
IAR 4.0
-2.8
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ‚
EAR
dv/dt
0.20
5.0 -5.0
Junction and Storage Temperature Range
TJ, TSTG
-55 to + 150 °C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient …
Symbol
RθJA
Limit
62.5
Units
V
A
W
mJ
A
mJ
V/ ns
Units
°C/W
8/17/04


IRF7319PBF Datasheet
Recommendation IRF7319PBF Datasheet
Part IRF7319PBF
Description Power MOSFET
Feature IRF7319PBF; www.DataSheet4U.com PD - 95267 IRF7319PbF l l l l l l Generation V Technology Ultra Low On-Resist.
Manufacture International Rectifier
Datasheet
Download IRF7319PBF Datasheet




International Rectifier IRF7319PBF
IRF7319PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
N-Ch 30 — —
P-Ch -30 — —
V
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
N-Ch
P-Ch
— 0.022 —
— 0.022 —
V/°C
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
N-Ch
P-Ch
—
—
—
—
0.023 0.029
0.032 0.046
0.042 0.058
0.076 0.098
VGS = 10V, ID = 5.8A „
VGS = 4.5V, ID = 4.7A „
VGS = -10V, ID = -4.9A „
VGS = -4.5V, ID = -3.6A „
N-Ch 1.0 — —
P-Ch -1.0 — —
V
VDS = VGS, ID = 250µA
VDS = VGS, ID = -250µA
N-Ch — 14 —
P-Ch — 7.7 —
S
VDS = 15V, ID = 5.8A „
VDS = -15V, ID = -4.9A
„
N-Ch — — 1.0
VDS = 24V, VGS = 0V
P-Ch —
N-Ch —
—
—
-1.0
25
µA
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 55°C
P-Ch — — -25
VDS = -24V, VGS = 0V, TJ = 55°C
N-P –– — ±100 nA VGS = ±20V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
—
—
22 33
23 34
2.6 3.9
3.8 5.7
6.4 9.6
5.9 8.9
nC
N-Channel
ID = 5.8A, VDS = 15V, VGS = 10V
„
P-Channel
ID = -4.9A, VDS = -15V, VGS = -10V
N-Ch — 8.1 12
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
—
—
—
—
—
—
—
13
8.9
13
26
34
17
32
19
13
20
39
51
26
48
ns
N-Channel
VDD = 15V, ID = 1.0A, RG = 6.0Ω,
RD = 15
„
P-Channel
VDD = -15V, ID = -1.0A, RG = 6.0,
RD = 15
N-Ch — 650 —
N-Channel
P-Ch — 710 —
VGS = 0V, VDS = 25V, ƒ = 1.0MHz
N-Ch — 320 — pF
P-Ch — 380 —
P-Channel
N-Ch — 130 —
VGS = 0V, VDS = -25V, ƒ = 1.0MHz
P-Ch — 180 —
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
N-Ch — — 2.5
IS
Continuous Source Current (Body Diode)
P-Ch — — -2.5 A
N-Ch — — 30
ISM
Pulsed Source Current (Body Diode) 
P-Ch — — -30
VSD Diode Forward Voltage
N-Ch — 0.78 1.0
P-Ch — -0.78 -1.0
V
TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
TJ = 25°C, IS = -1.7A, VGS = 0V ƒ
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
N-Ch —
P-Ch —
45
44
68
66
ns
N-Channel
TJ = 25°C, IF =1.7A, di/dt = 100A/µs
N-Ch —
P-Ch —
58
42
87
63
nC
P-Channel
„
TJ = 25°C, IF = -1.7A, di/dt = 100A/µs
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 22 )
„ Pulse width 300µs; duty cycle 2%.
‚ N-Channel ISD 4.0A, di/dt 74A/µs, VDD V(BR)DSS, TJ 150°C
… Surface mounted on FR-4 board, t 10sec.
P-Channel ISD -2.8A, di/dt 150A/µs, VDD V(BR)DSS, TJ 150°C
ƒ N-Channel Starting TJ = 25°C, L = 10mH RG = 25, IAS = 4.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 35mH RG = 25, IAS = -2.8A.



International Rectifier IRF7319PBF
100 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
10
N-Channel
IRF7319PbF
100 VGS
TOP
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
3.0V
10
3.0V
20µs PULSE WIDTH
1
TJ = 25°C
A
0.1 1 10
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
20µs PULSE WIDTH
1
TJ = 150°C
A
0.1 1 10
VDS, Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
100
TJ = 150°C
10
TJ = 25°C
VDS = 10V
20µs PULSE WIDTH
1A
3.0 3.5 4.0 4.5 5.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
1 VGS = 0V A
0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage





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