POWER MOSFET. IRHLF7970Z4 Datasheet

IRHLF7970Z4 MOSFET. Datasheet pdf. Equivalent


International Rectifier IRHLF7970Z4
www.DataSheet4U.com
PD - 94685B
RADIATION HARDENED
LOGIC LEVEL POWER MOSFET
THRU-HOLE (TO-39)
Product Summary
Part Number Radiation Level RDS(on) ID
IRHLF7970Z4 100K Rads (Si) 1.2-1.6A
IRHLF7930Z4 300K Rads (Si) 1.2-1.6A
IRHLF7970Z4
60V, P-CHANNEL
TECHNOLOGY
c
International Rectifier’s R7TM Logic Level Power
Mosfets provide simple solution to interfacing CMOS
and TTL control circuits to power devices in space
and other radiation environments. The threshold
voltage remains within accptable operating limits
over the full operating temperature and post radiation.
This is achieved while maintaining single event gate
rupture and single event burnout immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
T0-39
Features:
n 5V CMOS and TTL Compatible
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Light Weight
n Complimentary N-Channel Available -
IRHLF770Z4
Absolute Maximum Ratings
Parameter
ID @ VGS = -4.5V, TC = 25°C Continuous Drain Current
ID @ VGS = -4.5V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
TJ
TSTG
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
-1.6
-1.0 A
-6.4
5.0 W
0.04
W/°C
±10 V
10 mJ
-1.6 A
0.5 mJ
-4.0 V/ns
-55 to 150
oC
300 (0.063in/1.6mm from case for 10s)
0.98 ( Typical )
g
For footnotes refer to the last page
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1
04/07/04


IRHLF7970Z4 Datasheet
Recommendation IRHLF7970Z4 Datasheet
Part IRHLF7970Z4
Description (IRHLF79x0Z4) POWER MOSFET
Feature IRHLF7970Z4; www.DataSheet4U.com PD - 94685B RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (TO-39) Prod.
Manufacture International Rectifier
Datasheet
Download IRHLF7970Z4 Datasheet




International Rectifier IRHLF7970Z4
IRHLF7970Z4
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
gfs
IDSS
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
-60
-1.0
1.0
IGSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Typ Max Units
—— V
-0.06 — V/°C
Test Conditions
VGS = 0V, ID = -250µA
Reference to 25°C, ID = -1.0mA
— 1.2
VGS = -4.5V, ID = -1.0A
— -2.0 V
— — S( )
— -1.0
— -10 µA
— -100
— 100 nA
— 4.0
— 1.5 nC
— 1.8
VDS = VGS, ID = -250µA
VDS = -10V, IDS = -1.0A
VDS= -48V ,VGS=0V
VDS = -48V,
VGS = 0V, TJ =125°C
VGS = -10V
VGS =10V
VGS = -4.5V, ID = -1.6A
VDS = -30V
— 18
— 20
— 15 ns
VDD = -30V, ID = -1.6A,
VGS =-4.5V, RG = 24
— 25
7.0 — nH Measured from Drain lead (6mm /0.25in
from package) to Source lead(6mm/0.25in
from packge)with Source wire internally
bonded from Source pin to Drain pad
177 —
40 —
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
8.0 —
28 —
f = 5.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
IS Continuous Source Current (Body Diode) —
ISM Pulse Source Current (Body Diode)
— -1.6
— -6.4
A
VSD Diode Forward Voltage
— — -5.0 V
Tj = 25°C, IS = -1.6A, VGS = 0V
trr Reverse Recovery Time
— — 50 ns Tj = 25°C, IF =-1.6A, di/dt -100A/µs
QRR Reverse Recovery Charge
— — 50 nC
VDD -25V
ton Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max Units
— — 25 °C/W
Test Conditions
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
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International Rectifier IRHLF7970Z4
PRraed-IirartaiodniaCtiohnaracteristics
IRHLF7970Z4
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ➄➅
Parameter
100K Rads(Si)1 300KRads(Si)2 Units
Min Max Min Max
Test Conditions
BVDSS Drain-to-Source Breakdown Voltage -60 —
-60
VGS(th) Gate Threshold Voltage
-1.0 -2.0 -1.0
IGSS
Gate-to-Source Leakage Forward — -100 —
IGSS
Gate-to-Source Leakage Reverse — 100 —
IDSS Zero Gate Voltage Drain Current
RDS(on) Static Drain-to-Source
— -1.0
— 1.2
On-State Resistance (TO-39)
VSD Diode Forward Voltage
— -5.0 —
—V
VGS = 0V, ID = -250µA
-2.0 VGS = VDS, ID = -250µA
-100 nA
VGS =-10V
100 VGS = 10 V
-10 µA
VDS=-48V, VGS =0V
1.2
VGS = -4.5V, ID =-1.0A
-5.0 V
VGS = 0V, IS = -1.6A
1. Part number IRHLF7970Z4
2. Part number IRHLF7930Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET Energy Range
VDS (V)
(MeV/(mg/cm2)) (MeV)
(µm) @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
0V 2V 4V 5V 6V 7V 8V 10V
Br 37.9
285 36.8 -60 -60 -60 -60 -60 -50 -35 -25
I
59.9
345 32.7 -60 -60 -60 -60 -60 -20
-
-
Au 82.3
357 28.5 -60 -60 -60 -60
-
-
-
-
-70
-60
-50
-40
-30
-20
-10
0
0 2 4 6 8 10 12
VGS
Br
I
Au
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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