(IRHLG7x0Z4) POWER MOSFET
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PD-95865
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)
Product Summary
Part Num...
Description
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PD-95865
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level RDS(on) ID IRHLG770Z4 100K Rads (Si) 0.6Ω 1.07A IRHLG730Z4 300K Rads (Si) 0.6Ω 1.07A
IRHLG770Z4 60V, Quad N-CHANNEL
TECHNOLOGY
MO-036AB
International Rectifier’s R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
Features:
n n n n n n n n n n
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Complimentary P-Channel Available IRHLG7970Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 4.5V, TC = 25°C ID @ VGS = 4.5V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operati...
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